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Title: Highly charged ion secondary ion mass spectroscopy

Abstract

A secondary ion mass spectrometer using slow, highly charged ions produced in an electron beam ion trap permits ultra-sensitive surface analysis and high spatial resolution simultaneously. The spectrometer comprises an ion source producing a primary ion beam of highly charged ions that are directed at a target surface, a mass analyzer, and a microchannel plate detector of secondary ions that are sputtered from the target surface after interaction with the primary beam. The unusually high secondary ion yield permits the use of coincidence counting, in which the secondary ion stops are detected in coincidence with a particular secondary ion. The association of specific molecular species can be correlated. The unique multiple secondary nature of the highly charged ion interaction enables this new analytical technique.

Inventors:
 [1];  [2];  [1];  [1]
  1. Livermore, CA
  2. San Francisco, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874007
Patent Number(s):
6291820
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
highly; charged; secondary; mass; spectroscopy; spectrometer; slow; produced; electron; beam; trap; permits; ultra-sensitive; surface; analysis; spatial; resolution; simultaneously; comprises; source; producing; primary; directed; target; analyzer; microchannel; plate; detector; sputtered; interaction; unusually; yield; coincidence; counting; stops; detected; particular; association; specific; molecular; species; correlated; unique; multiple; nature; enables; analytical; technique; channel plate; molecular species; mass spectrometer; electron beam; spatial resolution; target surface; microchannel plate; mass spectroscopy; primary beam; mass analyzer; highly charged; surface analysis; coincidence counting; molecular specie; spectrometer comprises; coincidence count; analytical technique; /250/

Citation Formats

Hamza, Alex V, Schenkel, Thomas, Barnes, Alan V, and Schneider, Dieter H. Highly charged ion secondary ion mass spectroscopy. United States: N. p., 2001. Web.
Hamza, Alex V, Schenkel, Thomas, Barnes, Alan V, & Schneider, Dieter H. Highly charged ion secondary ion mass spectroscopy. United States.
Hamza, Alex V, Schenkel, Thomas, Barnes, Alan V, and Schneider, Dieter H. Mon . "Highly charged ion secondary ion mass spectroscopy". United States. https://www.osti.gov/servlets/purl/874007.
@article{osti_874007,
title = {Highly charged ion secondary ion mass spectroscopy},
author = {Hamza, Alex V and Schenkel, Thomas and Barnes, Alan V and Schneider, Dieter H},
abstractNote = {A secondary ion mass spectrometer using slow, highly charged ions produced in an electron beam ion trap permits ultra-sensitive surface analysis and high spatial resolution simultaneously. The spectrometer comprises an ion source producing a primary ion beam of highly charged ions that are directed at a target surface, a mass analyzer, and a microchannel plate detector of secondary ions that are sputtered from the target surface after interaction with the primary beam. The unusually high secondary ion yield permits the use of coincidence counting, in which the secondary ion stops are detected in coincidence with a particular secondary ion. The association of specific molecular species can be correlated. The unique multiple secondary nature of the highly charged ion interaction enables this new analytical technique.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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Works referenced in this record:

Emission of secondary particles from metals and insulators at impact of slow highly charged ions
journal, April 1997


Electronic Sputtering of Thin Conductors by Neutralization of Slow Highly Charged Ions
journal, March 1997


The Electron‐Beam Ion Trap
journal, October 1994


Quantification of metal trace contaminants on Si wafer surfaces by Laser-SNMS and TOF-SIMS using sputter deposited submonolayer standards
journal, July 1996