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Title: Process for Polycrystalline film silicon growth

Abstract

A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

Inventors:
 [1];  [2]
  1. Littleton, CO
  2. Evergreen, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
873955
Patent Number(s):
6281098
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC36-98GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; polycrystalline; film; silicon; growth; depositing; substrates; including; foreign; occurs; chamber; atmospheric; pressure; temperature; gradient; formed; maintained; throughout; formation; vapor; barrier; precludes; exit; constituent; chemicals; iodine; diiodide; tetraiodide; deposition; beneath; embodiment; blanketing; gas; entrance; oxygen; impurities; capable; repetition; reset; zone; conditions; polycrystalline film; deposition zone; temperature gradient; atmospheric pressure; polycrystalline silicon; crystalline silicon; film silicon; deposition occurs; foreign substrates; /438/117/118/136/423/

Citation Formats

Wang, Tihu, and Ciszek, Theodore F. Process for Polycrystalline film silicon growth. United States: N. p., 2001. Web.
Wang, Tihu, & Ciszek, Theodore F. Process for Polycrystalline film silicon growth. United States.
Wang, Tihu, and Ciszek, Theodore F. Mon . "Process for Polycrystalline film silicon growth". United States. https://www.osti.gov/servlets/purl/873955.
@article{osti_873955,
title = {Process for Polycrystalline film silicon growth},
author = {Wang, Tihu and Ciszek, Theodore F},
abstractNote = {A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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Works referenced in this record:

Kinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide Process
journal, January 1965


Electrical Properties of High-Purity Silicon Made from Silicon Tetraiodide
journal, January 1959


Deposition and Properties of Silicon on Graphite Substrates
journal, January 1976


Preparation of Pure Silicon by the Hydrogen Reduction of Silicon Tetraiodide
journal, January 1957


High Purity Silicon
journal, January 1954


High-Purity Silicon from an Iodide Process Pilot Plant
journal, January 1960


Impurity Introduction during Epitaxial Growth of Silicon
journal, July 1960