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Title: Process for Polycrystalline film silicon growth

Abstract

A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

Inventors:
 [1];  [2]
  1. (Littleton, CO)
  2. (Evergreen, CO)
Issue Date:
Research Org.:
Midwest Research Institute
OSTI Identifier:
873955
Patent Number(s):
6281098
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC36-98GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; polycrystalline; film; silicon; growth; depositing; substrates; including; foreign; occurs; chamber; atmospheric; pressure; temperature; gradient; formed; maintained; throughout; formation; vapor; barrier; precludes; exit; constituent; chemicals; iodine; diiodide; tetraiodide; deposition; beneath; embodiment; blanketing; gas; entrance; oxygen; impurities; capable; repetition; reset; zone; conditions; polycrystalline film; deposition zone; temperature gradient; atmospheric pressure; polycrystalline silicon; crystalline silicon; film silicon; deposition occurs; foreign substrates; /438/117/118/136/423/

Citation Formats

Wang, Tihu, and Ciszek, Theodore F. Process for Polycrystalline film silicon growth. United States: N. p., 2001. Web.
Wang, Tihu, & Ciszek, Theodore F. Process for Polycrystalline film silicon growth. United States.
Wang, Tihu, and Ciszek, Theodore F. Mon . "Process for Polycrystalline film silicon growth". United States. https://www.osti.gov/servlets/purl/873955.
@article{osti_873955,
title = {Process for Polycrystalline film silicon growth},
author = {Wang, Tihu and Ciszek, Theodore F.},
abstractNote = {A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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