Ion-beam treatment to prepare surfaces of p-CdTe films

Gessert, Timothy A

Title: Ion-beam treatment to prepare surfaces of p-CdTe films

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Abstract

A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

Inventors:

Gessert, Timothy A ^[1]

Conifer, CO

Issue Date:: 2001-01-01

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:: 873954

Patent Number(s):: 6281035

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/465 - Chemical or electrical treatment, e.g. electrolytic etching
H01L31/1828 - {the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

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DOE Contract Number:: AC36-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: ion-beam; treatment; prepare; surfaces; p-cdte; films; method; low-resistance; electrical; contact; layer; outer; layers; beam; processing; comprising; placing; cds; cdte; device; chamber; evacuating; orienting; apparatus; capable; generating; atoms; preferred; energy; directionality; introducing; igniting; manner; exposure; source-to-substrate; distance; maintained; mean-free; path; diffusion; length; vacuum; pressure; allowing; period; minutes; imparting; movement; substrate; control; uniformity; contact layer; free path; vacuum pressure; diffusion length; electrical contact; apparatus capable; p-cdte films; processing comprising; /438/

Citation Formats


                    Gessert, Timothy A. Ion-beam treatment to prepare surfaces of p-CdTe films.  United States: N. p., 2001. 
        Web.

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                    Gessert, Timothy A. Ion-beam treatment to prepare surfaces of p-CdTe films.  United States.

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                    Gessert, Timothy A. Mon .  
        "Ion-beam treatment to prepare surfaces of p-CdTe films".  United States.  https://www.osti.gov/servlets/purl/873954.

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@article{osti_873954,

  title        = {Ion-beam treatment to prepare surfaces of p-CdTe films},

  author       = {Gessert, Timothy A},

  abstractNote = {A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2001},

  month        = {1}

}

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