Ion-beam treatment to prepare surfaces of p-CdTe films
Abstract
A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.
- Inventors:
-
- Conifer, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 873954
- Patent Number(s):
- 6281035
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- ion-beam; treatment; prepare; surfaces; p-cdte; films; method; low-resistance; electrical; contact; layer; outer; layers; beam; processing; comprising; placing; cds; cdte; device; chamber; evacuating; orienting; apparatus; capable; generating; atoms; preferred; energy; directionality; introducing; igniting; manner; exposure; source-to-substrate; distance; maintained; mean-free; path; diffusion; length; vacuum; pressure; allowing; period; minutes; imparting; movement; substrate; control; uniformity; contact layer; free path; vacuum pressure; diffusion length; electrical contact; apparatus capable; p-cdte films; processing comprising; /438/
Citation Formats
Gessert, Timothy A. Ion-beam treatment to prepare surfaces of p-CdTe films. United States: N. p., 2001.
Web.
Gessert, Timothy A. Ion-beam treatment to prepare surfaces of p-CdTe films. United States.
Gessert, Timothy A. Mon .
"Ion-beam treatment to prepare surfaces of p-CdTe films". United States. https://www.osti.gov/servlets/purl/873954.
@article{osti_873954,
title = {Ion-beam treatment to prepare surfaces of p-CdTe films},
author = {Gessert, Timothy A},
abstractNote = {A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}