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Title: Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage

Abstract

A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.

Inventors:
 [1];  [2]
  1. Hinsdale, IL
  2. Oak Park, IL
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
OSTI Identifier:
873921
Patent Number(s):
6272036
Assignee:
University of Chicago (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
control; magnetic; direction; multi-layer; ferromagnetic; devices; bias; voltage; controlling; magnetization; materials; comprising; device; layers; disposed; combine; form; interlayer; exchange; coupling; insulating; layer; spacer; located; direct; applied; causing; change; occurs; absence; external; field; ferromagnetic layers; magnetic layer; magnetic field; bias voltage; insulating layer; materials comprising; external magnetic; ferromagnetic layer; spacer layer; magnetic devices; magnetic device; /365/

Citation Formats

You, Chun-Yeol, and Bader, Samuel D. Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage. United States: N. p., 2001. Web.
You, Chun-Yeol, & Bader, Samuel D. Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage. United States.
You, Chun-Yeol, and Bader, Samuel D. Mon . "Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage". United States. https://www.osti.gov/servlets/purl/873921.
@article{osti_873921,
title = {Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage},
author = {You, Chun-Yeol and Bader, Samuel D},
abstractNote = {A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}