skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Operation and biasing for single device equivalent to CMOS

Abstract

Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Inventors:
 [1]
  1. (10328 Pinehurst Ave., Omaha, NE 68124)
Issue Date:
Research Org.:
Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
OSTI Identifier:
873902
Patent Number(s):
6268636
Assignee:
Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124) OSTI
DOE Contract Number:  
FG47-93R701314
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
operation; biasing; single; device; equivalent; cmos; disclosed; semiconductor; devices; including; junction; rectifying; caused; p-type; presence; field; induced; carriers; particular; inverting; non-inverting; gate; voltage; channel; operating; characteristics; similar; conventional; multiple; systems; operated; modulators; non-latching; approach; blocking; parasitic; currents; typical; bias; schemes; described; simple; demonstrative; five; mask; fabrication; procedures; semiconductor single; parasitic current; multiple device; single device; characteristics similar; operating characteristics; semiconductor device; semiconductor devices; gate voltage; single devices; devices including; parasitic currents; field induced; fabrication procedures; mask fabrication; fabrication procedure; operating characteristic; device equivalent; /257/

Citation Formats

Welch, James D. Operation and biasing for single device equivalent to CMOS. United States: N. p., 2001. Web.
Welch, James D. Operation and biasing for single device equivalent to CMOS. United States.
Welch, James D. Mon . "Operation and biasing for single device equivalent to CMOS". United States. https://www.osti.gov/servlets/purl/873902.
@article{osti_873902,
title = {Operation and biasing for single device equivalent to CMOS},
author = {Welch, James D.},
abstractNote = {Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

Save / Share: