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Title: Low pressure stagnation flow reactor with a flow barrier

Abstract

A flow barrier disposed at the periphery of a workpiece for achieving uniform reaction across the surface of the workpiece, such as a semiconductor wafer, in a stagnation flow reactor operating under the conditions of a low pressure or low flow rate. The flow barrier is preferably in the shape of annulus and can include within the annular structure passages or flow channels for directing a secondary flow of gas substantially at the surface of a semiconductor workpiece. The flow barrier can be constructed of any material which is chemically inert to reactive gases flowing over the surface of the semiconductor workpiece.

Inventors:
 [1]
  1. (1306 Evelyn Ave., Berkeley, CA 94702)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873891
Patent Number(s):
6267840
Assignee:
Vosen, Steven R. (1306 Evelyn Ave., Berkeley, CA 94702) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
pressure; stagnation; flow; reactor; barrier; disposed; periphery; workpiece; achieving; uniform; reaction; surface; semiconductor; wafer; operating; conditions; rate; preferably; shape; annulus; annular; structure; passages; channels; directing; secondary; gas; substantially; constructed; material; chemically; inert; reactive; gases; flowing; reactor operating; stagnation flow; flow barrier; reactive gas; chemically inert; semiconductor wafer; flow channels; flow channel; flow rate; flow reactor; secondary flow; reactive gases; gas substantially; barrier disposed; gases flowing; /156/118/

Citation Formats

Vosen, Steven R. Low pressure stagnation flow reactor with a flow barrier. United States: N. p., 2001. Web.
Vosen, Steven R. Low pressure stagnation flow reactor with a flow barrier. United States.
Vosen, Steven R. Mon . "Low pressure stagnation flow reactor with a flow barrier". United States. https://www.osti.gov/servlets/purl/873891.
@article{osti_873891,
title = {Low pressure stagnation flow reactor with a flow barrier},
author = {Vosen, Steven R.},
abstractNote = {A flow barrier disposed at the periphery of a workpiece for achieving uniform reaction across the surface of the workpiece, such as a semiconductor wafer, in a stagnation flow reactor operating under the conditions of a low pressure or low flow rate. The flow barrier is preferably in the shape of annulus and can include within the annular structure passages or flow channels for directing a secondary flow of gas substantially at the surface of a semiconductor workpiece. The flow barrier can be constructed of any material which is chemically inert to reactive gases flowing over the surface of the semiconductor workpiece.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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