Low pressure stagnation flow reactor with a flow barrier
Abstract
A flow barrier disposed at the periphery of a workpiece for achieving uniform reaction across the surface of the workpiece, such as a semiconductor wafer, in a stagnation flow reactor operating under the conditions of a low pressure or low flow rate. The flow barrier is preferably in the shape of annulus and can include within the annular structure passages or flow channels for directing a secondary flow of gas substantially at the surface of a semiconductor workpiece. The flow barrier can be constructed of any material which is chemically inert to reactive gases flowing over the surface of the semiconductor workpiece.
- Inventors:
-
- 1306 Evelyn Ave., Berkeley, CA 94702
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873891
- Patent Number(s):
- 6267840
- Assignee:
- Vosen, Steven R. (1306 Evelyn Ave., Berkeley, CA 94702)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- pressure; stagnation; flow; reactor; barrier; disposed; periphery; workpiece; achieving; uniform; reaction; surface; semiconductor; wafer; operating; conditions; rate; preferably; shape; annulus; annular; structure; passages; channels; directing; secondary; gas; substantially; constructed; material; chemically; inert; reactive; gases; flowing; reactor operating; stagnation flow; flow barrier; reactive gas; chemically inert; semiconductor wafer; flow channels; flow channel; flow rate; flow reactor; secondary flow; reactive gases; gas substantially; barrier disposed; gases flowing; /156/118/
Citation Formats
Vosen, Steven R. Low pressure stagnation flow reactor with a flow barrier. United States: N. p., 2001.
Web.
Vosen, Steven R. Low pressure stagnation flow reactor with a flow barrier. United States.
Vosen, Steven R. Mon .
"Low pressure stagnation flow reactor with a flow barrier". United States. https://www.osti.gov/servlets/purl/873891.
@article{osti_873891,
title = {Low pressure stagnation flow reactor with a flow barrier},
author = {Vosen, Steven R},
abstractNote = {A flow barrier disposed at the periphery of a workpiece for achieving uniform reaction across the surface of the workpiece, such as a semiconductor wafer, in a stagnation flow reactor operating under the conditions of a low pressure or low flow rate. The flow barrier is preferably in the shape of annulus and can include within the annular structure passages or flow channels for directing a secondary flow of gas substantially at the surface of a semiconductor workpiece. The flow barrier can be constructed of any material which is chemically inert to reactive gases flowing over the surface of the semiconductor workpiece.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}
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Works referenced in this record:
Results from modeling and simulation of chemical downstream etch systems
report, May 1996
- Meeks, E.; Vosen, S. R.; Shon, J. W.