Adhesion layer for etching of tracks in nuclear trackable materials

Morse, Jeffrey D; Contolini, Robert J

Title: Adhesion layer for etching of tracks in nuclear trackable materials

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Abstract

A method for forming nuclear tracks having a width on the order of 100-200 nm in nuclear trackable materials, such as polycarbonate (LEXAN) without causing delamination of the LEXAN. The method utilizes an adhesion film having a inert oxide which allows the track to be sufficiently widened to >200 nm without delamination of the nuclear trackable materials. The adhesion film may be composed of a metal such as Cr, Ni, Au, Pt, or Ti, or composed of a dielectric having a stable surface, such as silicon dioxide (SiO.sub.2), silicon nitride (SiN.sub.x), and aluminum oxide (AlO). The adhesion film can either be deposited on top of the gate metal layer, or if the properties of the adhesion film are adequate, it can be used as the gate layer. Deposition of the adhesion film is achieved by standard techniques, such as sputtering or evaporation.

Inventors:

Morse, Jeffrey D ^[1]; Contolini, Robert J ^[2]

Martinez, CA
Lake Oswego, OR

Issue Date:: 2001-01-01

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

OSTI Identifier:: 873860

Patent Number(s):: 6261961

Assignee:: Regents of University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/32139 - {using masks}

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: adhesion; layer; etching; tracks; nuclear; trackable; materials; method; forming; width; 100-200; nm; polycarbonate; lexan; causing; delamination; utilizes; film; inert; oxide; allows; track; sufficiently; widened; 200; composed; metal; dielectric; stable; surface; silicon; dioxide; sio; nitride; aluminum; deposited; top; gate; properties; adequate; deposition; achieved; standard; techniques; sputtering; evaporation; adhesion layer; method utilizes; aluminum oxide; metal layer; silicon nitride; silicon dioxide; gate metal; trackable materials; nuclear trackable; nuclear tracks; stable surface; table surface; forming nuclear; trackable material; /438/

Citation Formats


                    Morse, Jeffrey D, and Contolini, Robert J. Adhesion layer for etching of tracks in nuclear trackable materials.  United States: N. p., 2001. 
        Web.

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                    Morse, Jeffrey D, & Contolini, Robert J. Adhesion layer for etching of tracks in nuclear trackable materials.  United States.

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                    Morse, Jeffrey D, and Contolini, Robert J. Mon .  
        "Adhesion layer for etching of tracks in nuclear trackable materials".  United States.  https://www.osti.gov/servlets/purl/873860.

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@article{osti_873860,

  title        = {Adhesion layer for etching of tracks in nuclear trackable materials},

  author       = {Morse, Jeffrey D and Contolini, Robert J},

  abstractNote = {A method for forming nuclear tracks having a width on the order of 100-200 nm in nuclear trackable materials, such as polycarbonate (LEXAN) without causing delamination of the LEXAN. The method utilizes an adhesion film having a inert oxide which allows the track to be sufficiently widened to >200 nm without delamination of the nuclear trackable materials. The adhesion film may be composed of a metal such as Cr, Ni, Au, Pt, or Ti, or composed of a dielectric having a stable surface, such as silicon dioxide (SiO.sub.2), silicon nitride (SiN.sub.x), and aluminum oxide (AlO). The adhesion film can either be deposited on top of the gate metal layer, or if the properties of the adhesion film are adequate, it can be used as the gate layer. Deposition of the adhesion film is achieved by standard techniques, such as sputtering or evaporation.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2001},

  month        = {1}

}

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