Method for applying a barrier layer to a silicon based substrate
Abstract
A method for applying a barrier layer which comprises a barium-strontium aluminosilicate to a silicon containing substrate which inhibits the formation of cracks.
- Inventors:
-
- Woodstock, CT
- Wethersfield, CT
- Issue Date:
- Research Org.:
- SOLAR TURBINES INC
- OSTI Identifier:
- 873821
- Patent Number(s):
- 6254935
- Assignee:
- United Technologies Corporation (Hartford, CT)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC02-92CE40960
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; applying; barrier; layer; silicon; based; substrate; comprises; barium-strontium; aluminosilicate; containing; inhibits; formation; cracks; silicon based; barrier layer; silicon containing; containing substrate; /427/
Citation Formats
Eaton, Harry E, and Lawton, Thomas H. Method for applying a barrier layer to a silicon based substrate. United States: N. p., 2001.
Web.
Eaton, Harry E, & Lawton, Thomas H. Method for applying a barrier layer to a silicon based substrate. United States.
Eaton, Harry E, and Lawton, Thomas H. Mon .
"Method for applying a barrier layer to a silicon based substrate". United States. https://www.osti.gov/servlets/purl/873821.
@article{osti_873821,
title = {Method for applying a barrier layer to a silicon based substrate},
author = {Eaton, Harry E and Lawton, Thomas H},
abstractNote = {A method for applying a barrier layer which comprises a barium-strontium aluminosilicate to a silicon containing substrate which inhibits the formation of cracks.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}