Voltage controlled spintronic devices for logic applications
Abstract
A reprogrammable logic gate comprising first and second voltage-controlled rotation transistors. Each transistor comprises three ferromagnetic layers with a spacer and insulating layer between the first and second ferromagnetic layers and an additional insulating layer between the second and third ferromagnetic layers. The third ferromagnetic layer of each transistor is connected to each other, and a constant external voltage source is applied to the second ferromagnetic layer of the first transistor. As input voltages are applied to the first ferromagnetic layer of each transistor, the relative directions of magnetization of the ferromagnetic layers and the magnitude of the external voltage determines the output voltage of the gate. By altering these parameters, the logic gate is capable of behaving as AND, OR, NAND, or NOR gates.
- Inventors:
-
- Naperville, IL
- Oak Park, IL
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- OSTI Identifier:
- 873802
- Patent Number(s):
- 6249453
- Assignee:
- University of Chicago (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03K - PULSE TECHNIQUE
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- voltage; controlled; spintronic; devices; logic; applications; reprogrammable; gate; comprising; voltage-controlled; rotation; transistors; transistor; comprises; ferromagnetic; layers; spacer; insulating; layer; additional; third; connected; constant; external; source; applied; input; voltages; relative; directions; magnetization; magnitude; determines; output; altering; parameters; capable; behaving; nand; nor; gates; ferromagnetic layers; magnetic layer; input voltage; output voltage; voltage source; insulating layer; voltage controlled; voltage control; ferromagnetic layer; programmable logic; logic gate; transistor comprises; /365/257/
Citation Formats
You, Chun-Yeol, and Bader, Samuel D. Voltage controlled spintronic devices for logic applications. United States: N. p., 2001.
Web.
You, Chun-Yeol, & Bader, Samuel D. Voltage controlled spintronic devices for logic applications. United States.
You, Chun-Yeol, and Bader, Samuel D. Mon .
"Voltage controlled spintronic devices for logic applications". United States. https://www.osti.gov/servlets/purl/873802.
@article{osti_873802,
title = {Voltage controlled spintronic devices for logic applications},
author = {You, Chun-Yeol and Bader, Samuel D},
abstractNote = {A reprogrammable logic gate comprising first and second voltage-controlled rotation transistors. Each transistor comprises three ferromagnetic layers with a spacer and insulating layer between the first and second ferromagnetic layers and an additional insulating layer between the second and third ferromagnetic layers. The third ferromagnetic layer of each transistor is connected to each other, and a constant external voltage source is applied to the second ferromagnetic layer of the first transistor. As input voltages are applied to the first ferromagnetic layer of each transistor, the relative directions of magnetization of the ferromagnetic layers and the magnitude of the external voltage determines the output voltage of the gate. By altering these parameters, the logic gate is capable of behaving as AND, OR, NAND, or NOR gates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}