Sealable stagnation flow geometries for the uniform deposition of materials and heat
Abstract
The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.
- Inventors:
-
- Livermore, CA
- Alamo, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873769
- Patent Number(s):
- 6242049
- Assignee:
- Sandia Corporation (Livermore, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- sealable; stagnation; flow; geometries; uniform; deposition; materials; heat; employs; constrained; geometry; apparatus; achieve; maximizes; fluxes; reactant; gases; flat; surfaces; minimizing; reagents; finite; dimension; edge; effects; results; continuous; films; thickness; composition; structure; chemical; vapor; processes; fabrication; semiconductors; stagnation flow; reactant gases; chemical vapor; vapor deposition; deposition process; reactant gas; deposition processes; uniform deposition; edge effects; flat surface; flow geometries; finite dimension; uniform deposit; continuous film; /427/
Citation Formats
McCarty, Kevin F, Kee, Robert J, Lutz, Andrew E, and Meeks, Ellen. Sealable stagnation flow geometries for the uniform deposition of materials and heat. United States: N. p., 2001.
Web.
McCarty, Kevin F, Kee, Robert J, Lutz, Andrew E, & Meeks, Ellen. Sealable stagnation flow geometries for the uniform deposition of materials and heat. United States.
McCarty, Kevin F, Kee, Robert J, Lutz, Andrew E, and Meeks, Ellen. Mon .
"Sealable stagnation flow geometries for the uniform deposition of materials and heat". United States. https://www.osti.gov/servlets/purl/873769.
@article{osti_873769,
title = {Sealable stagnation flow geometries for the uniform deposition of materials and heat},
author = {McCarty, Kevin F and Kee, Robert J and Lutz, Andrew E and Meeks, Ellen},
abstractNote = {The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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