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Title: Sealable stagnation flow geometries for the uniform deposition of materials and heat

Abstract

The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.

Inventors:
 [1];  [1];  [2];  [1]
  1. (Livermore, CA)
  2. (Alamo, CA)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873769
Patent Number(s):
6242049
Assignee:
Sandia Corporation (Livermore, CA) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
sealable; stagnation; flow; geometries; uniform; deposition; materials; heat; employs; constrained; geometry; apparatus; achieve; maximizes; fluxes; reactant; gases; flat; surfaces; minimizing; reagents; finite; dimension; edge; effects; results; continuous; films; thickness; composition; structure; chemical; vapor; processes; fabrication; semiconductors; stagnation flow; reactant gases; chemical vapor; vapor deposition; deposition process; reactant gas; deposition processes; uniform deposition; edge effects; flat surface; flow geometries; finite dimension; uniform deposit; continuous film; /427/

Citation Formats

McCarty, Kevin F., Kee, Robert J., Lutz, Andrew E., and Meeks, Ellen. Sealable stagnation flow geometries for the uniform deposition of materials and heat. United States: N. p., 2001. Web.
McCarty, Kevin F., Kee, Robert J., Lutz, Andrew E., & Meeks, Ellen. Sealable stagnation flow geometries for the uniform deposition of materials and heat. United States.
McCarty, Kevin F., Kee, Robert J., Lutz, Andrew E., and Meeks, Ellen. Mon . "Sealable stagnation flow geometries for the uniform deposition of materials and heat". United States. https://www.osti.gov/servlets/purl/873769.
@article{osti_873769,
title = {Sealable stagnation flow geometries for the uniform deposition of materials and heat},
author = {McCarty, Kevin F. and Kee, Robert J. and Lutz, Andrew E. and Meeks, Ellen},
abstractNote = {The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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