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Title: Electrical isolation of component cells in monolithically interconnected modules

Abstract

A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.

Inventors:
 [1]
  1. (Golden, CO)
Issue Date:
Research Org.:
Midwest Research Institute
OSTI Identifier:
873764
Patent Number(s):
6239354
Assignee:
Midwest Research Institute (Kansas City, MI) NREL
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
electrical; isolation; component; cells; monolithically; interconnected; modules; photovoltaic; module; electrically; connected; comprises; substrate; plurality; formed; cell; including; primary; absorber; layer; light; receiving; surface; p-region; p-type; dopant; n-region; n-type; adjacent; form; single; pn-junction; diode; intervening; interfacial; regions; conductivity; type; orientation; reverse-breakdown; voltage; sufficient; prevent; inter-cell; shunting; isolated; vertical; trench; trough; interconnects; disposed; trenches; contacting; doped; opposite; contacts; receiving surface; n-type dopant; adjacent cells; electrically isolated; electrical contacts; cell including; photovoltaic module; breakdown voltage; electrical contact; electrically connected; p-type dopant; adjacent cell; conductivity type; electrical isolation; absorber layer; region formed; type dopant; interconnected photovoltaic; electrically isolate; monolithically interconnected; cell electric; interconnected modules; /136/257/438/

Citation Formats

Wanlass, Mark W. Electrical isolation of component cells in monolithically interconnected modules. United States: N. p., 2001. Web.
Wanlass, Mark W. Electrical isolation of component cells in monolithically interconnected modules. United States.
Wanlass, Mark W. Mon . "Electrical isolation of component cells in monolithically interconnected modules". United States. https://www.osti.gov/servlets/purl/873764.
@article{osti_873764,
title = {Electrical isolation of component cells in monolithically interconnected modules},
author = {Wanlass, Mark W.},
abstractNote = {A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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