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Title: Method for mask repair using defect compensation

Abstract

A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

Inventors:
 [1];  [2]
  1. San Ramon, CA
  2. Livermore, CA
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
873751
Patent Number(s):
6235434
Assignee:
EUV LLC (Santa Clara, CA)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; mask; repair; defect; compensation; amplitude; phase; defects; lithographic; masks; involves; modifying; altering; portion; absorber; pattern; surface; blank; proximate; compensate; local; disturbance; optical; field; due; lithographic masks; method involves; method involve; field due; involves modifying; phase defect; lithographic mask; /430/

Citation Formats

Sweeney, Donald W, and Ray-Chaudhuri, Avijit K. Method for mask repair using defect compensation. United States: N. p., 2001. Web.
Sweeney, Donald W, & Ray-Chaudhuri, Avijit K. Method for mask repair using defect compensation. United States.
Sweeney, Donald W, and Ray-Chaudhuri, Avijit K. Mon . "Method for mask repair using defect compensation". United States. https://www.osti.gov/servlets/purl/873751.
@article{osti_873751,
title = {Method for mask repair using defect compensation},
author = {Sweeney, Donald W and Ray-Chaudhuri, Avijit K},
abstractNote = {A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Works referenced in this record:

Repair of opaque defects on reflection masks for soft x-ray projection lithography
journal, November 1992