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Title: Process for fabricating device structures for real-time process control of silicon doping

Abstract

Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.

Inventors:
 [1]
  1. (San Jose, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
873689
Patent Number(s):
6221726
Assignee:
Regents of University of Claifornia (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; fabricating; device; structures; real-time; control; silicon; doping; designed; allow; measurement; parameters; immediately; step; occurred; processed; contact; formation; standard; semiconductor; fabrication; techniques; contacts; formed; covered; oxide; layer; aluminum; patterned; expose; pads; selected; regions; doped; performed; structure; annealed; pulsed; excimer; laser; annealing; unlike; effect; light; reflected; complete; probed; ascertain; data; analysis; determine; probable; yield; reductions; due; improper; execution; provide; feedback; integrated; circuit; silicon device; process parameters; circuit fabrication; aluminum layer; laser annealing; semiconductor fabrication; process control; laser light; integrated circuit; oxide layer; process parameter; fabrication techniques; excimer laser; selected regions; annealing process; allow measurement; real-time process; selected region; device structures; doping process; /438/

Citation Formats

Weiner, Kurt H. Process for fabricating device structures for real-time process control of silicon doping. United States: N. p., 2001. Web.
Weiner, Kurt H. Process for fabricating device structures for real-time process control of silicon doping. United States.
Weiner, Kurt H. Mon . "Process for fabricating device structures for real-time process control of silicon doping". United States. https://www.osti.gov/servlets/purl/873689.
@article{osti_873689,
title = {Process for fabricating device structures for real-time process control of silicon doping},
author = {Weiner, Kurt H.},
abstractNote = {Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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