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Title: Method of physical vapor deposition of metal oxides on semiconductors

Abstract

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of amore » structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Inventors:
 [1]
  1. Knoxville, TN
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
873663
Patent Number(s):
6214712
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; physical; vapor; deposition; metal; oxides; semiconductors; process; growing; oxide; film; semiconductor; surface; technique; high-vacuum; environment; structure; formed; involves; steps; heating; introducing; hydrogen; gas; conditions; favorable; desired; unfavorable; formation; native; specifically; temperature; ratio; partial; pressure; water; vacuum; render; thermodynamically; unstable; established; constituent; atoms; deposited; directed; interface; example; epitaxial; 001; -oriented; ceo; overlying; substrate; water pressure; desired metal; hydrogen partial; thermodynamically unstable; structure formed; process involves; hydrogen gas; metal oxide; vapor deposition; metal oxides; partial pressure; semiconductor surface; physical vapor; vacuum environment; deposition technique; /438/117/148/427/

Citation Formats

Norton, David P. Method of physical vapor deposition of metal oxides on semiconductors. United States: N. p., 2001. Web.
Norton, David P. Method of physical vapor deposition of metal oxides on semiconductors. United States.
Norton, David P. Mon . "Method of physical vapor deposition of metal oxides on semiconductors". United States. https://www.osti.gov/servlets/purl/873663.
@article{osti_873663,
title = {Method of physical vapor deposition of metal oxides on semiconductors},
author = {Norton, David P},
abstractNote = {A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Works referenced in this record:

Properties of CeO[sub 2] thin films deposited on Si(100) and Si(111) substrates by radio frequency-magnetron sputtering
journal, May 1998


Oxygen adsorption on a Ge(100) surface
journal, December 1982


Ceramic layer epitaxy by pulsed laser deposition in an ultrahigh vacuum system
journal, May 1991


Oxygen roughening of Ge(001) surfaces
journal, January 1994


Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998


Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation
journal, February 1997


Growth of (110)‚Äźoriented CeO 2 layers on (100) silicon substrates
journal, December 1991


Thermodynamic stability of binary oxides in contact with silicon
journal, November 1996