Fabrication of precision high quality facets on molecular beam epitaxy material

Petersen, Holly E; Goward, William D; Dijaili, Sol P

Title: Fabrication of precision high quality facets on molecular beam epitaxy material

Abstract

Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

Inventors:

Petersen, Holly E ^[1]; Goward, William D ^[2]; Dijaili, Sol P ^[3]

Tracy, CA
Antioch, CA
Moraga, CA

Issue Date:: 2001-01-01

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

OSTI Identifier:: 873616

Patent Number(s):: 6204189

Assignee:: Regents of University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0274 - {Photolithographic processes}
H01L21/30621 - {Vapour phase etching}
H01L21/3086 - {characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: fabrication; precision; quality; facets; molecular; beam; epitaxy; material; fabricating; mirrored; vertical; surfaces; semiconductor; layered; grown; energy; chemically; assisted; etching; caibe; employed; prepare; mbe-grown; iii-v; materials; unusually; concentrations; oxygen; evacuated; atmospheres; chlorine; xenon; beams; uv-stabilized; smooth-surfaced; photoresist; contribute; highly; chemically assisted; resist material; semiconductor layer; molecular beam; beam epitaxy; vertical surfaces; photoresist material; photoresist materials; mirrored surfaces; mirrored surface; vertical surface; beam etching; material grown; /438/216/

Citation Formats


                    Petersen, Holly E, Goward, William D, and Dijaili, Sol P. Fabrication of precision high quality facets on molecular beam epitaxy material.  United States: N. p., 2001. 
        Web.

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                    Petersen, Holly E, Goward, William D, & Dijaili, Sol P. Fabrication of precision high quality facets on molecular beam epitaxy material.  United States.

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                    Petersen, Holly E, Goward, William D, and Dijaili, Sol P. Mon .  
        "Fabrication of precision high quality facets on molecular beam epitaxy material".  United States.  https://www.osti.gov/servlets/purl/873616.

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@article{osti_873616,

  title        = {Fabrication of precision high quality facets on molecular beam epitaxy material},

  author       = {Petersen, Holly E and Goward, William D and Dijaili, Sol P},

  abstractNote = {Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2001},

  month        = {1}

}

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Works referenced in this record:

Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy
journal, January 1983

Lincoln, G. A.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 1, Issue 4
https://doi.org/10.1116/1.582671

Ridge formation for AlGaAs GRINSCH lasers by Cl/sub 2/ reactive ion etching
journal, October 1990

Jost, M.; Bona, G. L.; Buchmann, P.
IEEE Photonics Technology Letters, Vol. 2, Issue 10
https://doi.org/10.1109/68.60763

Full-wafer technology-A new approach to large-scale laser fabrication and integration
journal, June 1991

Vettiger, P.; Benedict, M. K.; Bona, G. -L.
IEEE Journal of Quantum Electronics, Vol. 27, Issue 6
https://doi.org/10.1109/3.89949

Fabrication of microlasers and microresonator optical switches
journal, December 1989

Scherer, A.; Jewell, J. L.; Lee, Y. H.
Applied Physics Letters, Vol. 55, Issue 26
https://doi.org/10.1063/1.101935

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Similar Records

Title: Fabrication of precision high quality facets on molecular beam epitaxy material

Abstract

Citation Formats

Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy journal, January 1983

Ridge formation for AlGaAs GRINSCH lasers by Cl/sub 2/ reactive ion etching journal, October 1990

Full-wafer technology-A new approach to large-scale laser fabrication and integration journal, June 1991

Fabrication of microlasers and microresonator optical switches journal, December 1989

Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy
journal, January 1983

Ridge formation for AlGaAs GRINSCH lasers by Cl/sub 2/ reactive ion etching
journal, October 1990

Full-wafer technology-A new approach to large-scale laser fabrication and integration
journal, June 1991

Fabrication of microlasers and microresonator optical switches
journal, December 1989