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Title: Fabrication of precision high quality facets on molecular beam epitaxy material

Abstract

Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

Inventors:
 [1];  [2];  [3]
  1. (Tracy, CA)
  2. (Antioch, CA)
  3. (Moraga, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
873616
Patent Number(s):
6204189
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
fabrication; precision; quality; facets; molecular; beam; epitaxy; material; fabricating; mirrored; vertical; surfaces; semiconductor; layered; grown; energy; chemically; assisted; etching; caibe; employed; prepare; mbe-grown; iii-v; materials; unusually; concentrations; oxygen; evacuated; atmospheres; chlorine; xenon; beams; uv-stabilized; smooth-surfaced; photoresist; contribute; highly; chemically assisted; resist material; semiconductor layer; molecular beam; beam epitaxy; vertical surfaces; photoresist material; photoresist materials; mirrored surfaces; mirrored surface; vertical surface; beam etching; material grown; /438/216/

Citation Formats

Petersen, Holly E., Goward, William D., and Dijaili, Sol P. Fabrication of precision high quality facets on molecular beam epitaxy material. United States: N. p., 2001. Web.
Petersen, Holly E., Goward, William D., & Dijaili, Sol P. Fabrication of precision high quality facets on molecular beam epitaxy material. United States.
Petersen, Holly E., Goward, William D., and Dijaili, Sol P. Mon . "Fabrication of precision high quality facets on molecular beam epitaxy material". United States. https://www.osti.gov/servlets/purl/873616.
@article{osti_873616,
title = {Fabrication of precision high quality facets on molecular beam epitaxy material},
author = {Petersen, Holly E. and Goward, William D. and Dijaili, Sol P.},
abstractNote = {Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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