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Title: Fabrication of precision high quality facets on molecular beam epitaxy material

Abstract

Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

Inventors:
 [1];  [2];  [3]
  1. Tracy, CA
  2. Antioch, CA
  3. Moraga, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
873616
Patent Number(s):
6204189
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
fabrication; precision; quality; facets; molecular; beam; epitaxy; material; fabricating; mirrored; vertical; surfaces; semiconductor; layered; grown; energy; chemically; assisted; etching; caibe; employed; prepare; mbe-grown; iii-v; materials; unusually; concentrations; oxygen; evacuated; atmospheres; chlorine; xenon; beams; uv-stabilized; smooth-surfaced; photoresist; contribute; highly; chemically assisted; resist material; semiconductor layer; molecular beam; beam epitaxy; vertical surfaces; photoresist material; photoresist materials; mirrored surfaces; mirrored surface; vertical surface; beam etching; material grown; /438/216/

Citation Formats

Petersen, Holly E, Goward, William D, and Dijaili, Sol P. Fabrication of precision high quality facets on molecular beam epitaxy material. United States: N. p., 2001. Web.
Petersen, Holly E, Goward, William D, & Dijaili, Sol P. Fabrication of precision high quality facets on molecular beam epitaxy material. United States.
Petersen, Holly E, Goward, William D, and Dijaili, Sol P. Mon . "Fabrication of precision high quality facets on molecular beam epitaxy material". United States. https://www.osti.gov/servlets/purl/873616.
@article{osti_873616,
title = {Fabrication of precision high quality facets on molecular beam epitaxy material},
author = {Petersen, Holly E and Goward, William D and Dijaili, Sol P},
abstractNote = {Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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Works referenced in this record:

Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy
journal, January 1983


Ridge formation for AlGaAs GRINSCH lasers by Cl/sub 2/ reactive ion etching
journal, October 1990


Full-wafer technology-A new approach to large-scale laser fabrication and integration
journal, June 1991


Fabrication of microlasers and microresonator optical switches
journal, December 1989