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Title: High efficiency, low cost, thin film silicon solar cell design and method for making

Abstract

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finallymore » reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.« less

Inventors:
 [1]
  1. (Denver, CO)
Issue Date:
Research Org.:
MIDWEST RESEARCH INSTITUTE
OSTI Identifier:
873604
Patent Number(s):
6201261
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
efficiency; cost; film; silicon; solar; cell; design; method; semiconductor; device; substrate; conductive; intermediate; layer; deposited; serves; electrode; optical; reflector; interface; impurity; gettering; grain; size; thickness; preferably; times; formed; depositing; metal; semiconductive; material; metal-coated; produce; composite; structure; optically; processing; illuminating; infrared; electromagnetic; radiation; according; unique; time-energy; profile; produces; pits; backside; surface; highly; reflective; resistivity; alloy; entire; finally; grain-enhanced; increasing; energy; level; initiate; pit; formation; create; desired; density; ramping; heated; interfacial; melt; reducing; third; holding; period; time; allow; enhancement; semiconductive material; time-energy profile; impurity gettering; layer serves; highly reflective; energy level; composite structure; metal layer; electromagnetic radiation; conductive material; solar cell; semiconductor material; semiconductor layer; silicon solar; grain size; semiconductor device; intermediate layer; layer deposited; alloy layer; coated substrate; cell design; layer thickness; resistivity alloy; backside surface; produces pits; pit size; optically processing; film silicon; entire device; desired pit; unique time; conductive intermediate; /257/136/438/

Citation Formats

Sopori, Bhushan L. High efficiency, low cost, thin film silicon solar cell design and method for making. United States: N. p., 2001. Web.
Sopori, Bhushan L. High efficiency, low cost, thin film silicon solar cell design and method for making. United States.
Sopori, Bhushan L. Mon . "High efficiency, low cost, thin film silicon solar cell design and method for making". United States. https://www.osti.gov/servlets/purl/873604.
@article{osti_873604,
title = {High efficiency, low cost, thin film silicon solar cell design and method for making},
author = {Sopori, Bhushan L.},
abstractNote = {A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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