Apparatus and method for in-situ cleaning of resist outgassing windows
Abstract
An apparatus and method for in-situ cleaning of resist outgassing windows. The apparatus includes a chamber located in a structure, with the chamber having an outgassing window to be cleaned positioned in alignment with a slot in the chamber, whereby radiation energy passes through the window, the chamber, and the slot onto a resist-coated wafer mounted in the structure. The chamber is connected to a gas supply and the structure is connected to a vacuum pump. Within the chamber are two cylindrical sector electrodes and a filament is electrically connected to one sector electrode and a power supply. In a first cleaning method the sector electrodes are maintained at the same voltage, the filament is unheated, the chamber is filled with argon (Ar) gas under pressure, and the window is maintained at a zero voltage, whereby Ar ions are accelerated onto the window surface, sputtering away carbon deposits that build up as a result of resist outgassing. A second cleaning method is similar except oxygen gas (O.sub.2) is admitted to the chamber instead of Ar. These two methods can be carried out during lithographic operation. A third method, carried out during a maintenance period, involves admitting CO.sub.2 into the chamber,more »
- Inventors:
-
- San Ramon, CA
- Tracy, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873574
- Patent Number(s):
- 6192897
- Assignee:
- EUV LLC (Santa Clara, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B08 - CLEANING B08B - CLEANING IN GENERAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- apparatus; method; in-situ; cleaning; resist; outgassing; windows; chamber; located; structure; window; cleaned; positioned; alignment; slot; whereby; radiation; energy; passes; resist-coated; wafer; mounted; connected; gas; supply; vacuum; pump; cylindrical; sector; electrodes; filament; electrically; electrode; power; maintained; voltage; unheated; filled; argon; pressure; zero; accelerated; surface; sputtering; carbon; deposits; build; result; similar; oxygen; admitted; methods; carried; lithographic; operation; third; maintenance; period; involves; admitting; heating; thermionic; emission; voltages; excited; molecules; created; impact; contamination; gasify; producing; gaseous; products; pumped; radiation energy; carbon deposits; whereby radiation; zero voltage; gas supply; oxygen gas; gas molecules; power supply; electrically connected; gaseous product; gaseous products; vacuum pump; resist outgassing; coated wafer; third method; thermionic emission; carbon contamination; cleaning method; chamber located; outgassing windows; outgassing window; in-situ cleaning; situ cleaning; /134/
Citation Formats
Klebanoff, Leonard E, and Haney, Steven J. Apparatus and method for in-situ cleaning of resist outgassing windows. United States: N. p., 2001.
Web.
Klebanoff, Leonard E, & Haney, Steven J. Apparatus and method for in-situ cleaning of resist outgassing windows. United States.
Klebanoff, Leonard E, and Haney, Steven J. Mon .
"Apparatus and method for in-situ cleaning of resist outgassing windows". United States. https://www.osti.gov/servlets/purl/873574.
@article{osti_873574,
title = {Apparatus and method for in-situ cleaning of resist outgassing windows},
author = {Klebanoff, Leonard E and Haney, Steven J},
abstractNote = {An apparatus and method for in-situ cleaning of resist outgassing windows. The apparatus includes a chamber located in a structure, with the chamber having an outgassing window to be cleaned positioned in alignment with a slot in the chamber, whereby radiation energy passes through the window, the chamber, and the slot onto a resist-coated wafer mounted in the structure. The chamber is connected to a gas supply and the structure is connected to a vacuum pump. Within the chamber are two cylindrical sector electrodes and a filament is electrically connected to one sector electrode and a power supply. In a first cleaning method the sector electrodes are maintained at the same voltage, the filament is unheated, the chamber is filled with argon (Ar) gas under pressure, and the window is maintained at a zero voltage, whereby Ar ions are accelerated onto the window surface, sputtering away carbon deposits that build up as a result of resist outgassing. A second cleaning method is similar except oxygen gas (O.sub.2) is admitted to the chamber instead of Ar. These two methods can be carried out during lithographic operation. A third method, carried out during a maintenance period, involves admitting CO.sub.2 into the chamber, heating the filament to a point of thermionic emission, the sector electrodes are at different voltages, excited CO.sub.2 gas molecules are created which impact the carbon contamination on the window, and gasify it, producing CO gaseous products that are pumped away.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}