Scanning evanescent electro-magnetic microscope
Abstract
A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.
- Inventors:
-
- Alameda, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 873489
- Patent Number(s):
- 6173604
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G01 - MEASURING G01Q - SCANNING-PROBE TECHNIQUES OR APPARATUS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- scanning; evanescent; electro-magnetic; microscope; novel; described; near-field; electromagnetic; waves; probe; sample; properties; capable; resolution; imaging; quantitative; measurements; electrical; inventive; wave; semm; map; dielectric; constant; tangent; loss; conductivity; complex; impedance; parameters; materials; corresponds; imaged; detail; measure; electrically; conducting; magnetic wave; conducting material; dielectric constant; electrically conducting; electromagnetic waves; electrical properties; electromagnetic wave; resolution imaging; quantitative measurements; electrical parameter; evanescent wave; quantitative measure; electrical parameters; electrical impedance; evanescent electromagnetic; quantitative measurement; probe sample; /73/250/
Citation Formats
Xiang, Xiao-Dong, and Gao, Chen. Scanning evanescent electro-magnetic microscope. United States: N. p., 2001.
Web.
Xiang, Xiao-Dong, & Gao, Chen. Scanning evanescent electro-magnetic microscope. United States.
Xiang, Xiao-Dong, and Gao, Chen. Mon .
"Scanning evanescent electro-magnetic microscope". United States. https://www.osti.gov/servlets/purl/873489.
@article{osti_873489,
title = {Scanning evanescent electro-magnetic microscope},
author = {Xiang, Xiao-Dong and Gao, Chen},
abstractNote = {A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}
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Works referenced in this record:
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Nondestructive Imaging of Dielectric-Constant Profiles and Ferroelectric Domains with a Scanning-Tip Microwave Near-Field Microscope
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Scanning tip microwave near‐field microscope
journal, June 1996
- Wei, T.; Xiang, X. ‐D.; Wallace‐Freedman, W. G.
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