skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Scanning evanescent electro-magnetic microscope

Abstract

A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

Inventors:
 [1];  [1]
  1. (Alameda, CA)
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
873489
Patent Number(s):
6173604
Assignee:
Regents of University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
scanning; evanescent; electro-magnetic; microscope; novel; described; near-field; electromagnetic; waves; probe; sample; properties; capable; resolution; imaging; quantitative; measurements; electrical; inventive; wave; semm; map; dielectric; constant; tangent; loss; conductivity; complex; impedance; parameters; materials; corresponds; imaged; detail; measure; electrically; conducting; magnetic wave; conducting material; dielectric constant; electrically conducting; electromagnetic waves; electrical properties; electromagnetic wave; resolution imaging; quantitative measurements; electrical parameter; evanescent wave; quantitative measure; electrical parameters; electrical impedance; evanescent electromagnetic; quantitative measurement; probe sample; /73/250/

Citation Formats

Xiang, Xiao-Dong, and Gao, Chen. Scanning evanescent electro-magnetic microscope. United States: N. p., 2001. Web.
Xiang, Xiao-Dong, & Gao, Chen. Scanning evanescent electro-magnetic microscope. United States.
Xiang, Xiao-Dong, and Gao, Chen. Mon . "Scanning evanescent electro-magnetic microscope". United States. https://www.osti.gov/servlets/purl/873489.
@article{osti_873489,
title = {Scanning evanescent electro-magnetic microscope},
author = {Xiang, Xiao-Dong and Gao, Chen},
abstractNote = {A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

Save / Share: