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Title: Scanning evanescent electro-magnetic microscope

Abstract

A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

Inventors:
 [1];  [1]
  1. Alameda, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
873489
Patent Number(s):
6173604
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01Q - SCANNING-PROBE TECHNIQUES OR APPARATUS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
scanning; evanescent; electro-magnetic; microscope; novel; described; near-field; electromagnetic; waves; probe; sample; properties; capable; resolution; imaging; quantitative; measurements; electrical; inventive; wave; semm; map; dielectric; constant; tangent; loss; conductivity; complex; impedance; parameters; materials; corresponds; imaged; detail; measure; electrically; conducting; magnetic wave; conducting material; dielectric constant; electrically conducting; electromagnetic waves; electrical properties; electromagnetic wave; resolution imaging; quantitative measurements; electrical parameter; evanescent wave; quantitative measure; electrical parameters; electrical impedance; evanescent electromagnetic; quantitative measurement; probe sample; /73/250/

Citation Formats

Xiang, Xiao-Dong, and Gao, Chen. Scanning evanescent electro-magnetic microscope. United States: N. p., 2001. Web.
Xiang, Xiao-Dong, & Gao, Chen. Scanning evanescent electro-magnetic microscope. United States.
Xiang, Xiao-Dong, and Gao, Chen. Mon . "Scanning evanescent electro-magnetic microscope". United States. https://www.osti.gov/servlets/purl/873489.
@article{osti_873489,
title = {Scanning evanescent electro-magnetic microscope},
author = {Xiang, Xiao-Dong and Gao, Chen},
abstractNote = {A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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Works referenced in this record:

Non-destructive characterization of materials by evanescent microwaves
journal, May 1993


Scanning tip microwave near‐field microscope
journal, June 1996