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Title: Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

Abstract

An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

Inventors:
 [1];  [2]
+ Show Inventor Affiliations
  1. Bethel Park, PA
  2. Bay Village, OH
Issue Date:
Research Org.:
Westinghouse Electric Corp., Pittsburgh, PA (United States)
OSTI Identifier:
873454
Patent Number(s):
6162987
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
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DOE Contract Number:  
AC11-93PN38195
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
monolithic; interconnected; module; tunnel; junction; enhanced; electrical; optical; performance; improved; thermophotovoltaic; tpv; device; provided; modules; mims; semiconductor; devices; converting; infrared; radiation; electricity; developed; structure; n-type; emitter; p-type; base; lateral; conduction; layer; incorporation; reduction; amount; material; results; negligible; parasitic; absorption; decreased; series; resistance; increased; voltage; active; novel; potential; efficiency; 24; series resistance; optical performance; tunnel junction; infrared radiation; semiconductor device; semiconductor devices; improved electrical; tpv device; enhanced electrical; p-type material; monolithic interconnected; type base; type material; interconnected modules; pv device; converting infrared; /136/

Citation Formats

Murray, Christopher S, and Wilt, David M. Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance. United States: N. p., 2000. Web.
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Murray, Christopher S, & Wilt, David M. Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance. United States.
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Murray, Christopher S, and Wilt, David M. Sat . "Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance". United States. https://www.osti.gov/servlets/purl/873454.
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@article{osti_873454,
title = {Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance},
author = {Murray, Christopher S and Wilt, David M},
abstractNote = {An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}
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Works referenced in this record:

n/p/n tunnel junction InGaAs Monolithic Interconnected Module (MIM)
conference, January 1999

  • Wilt, David M.; Murray, Christopher S.; Fatemi, Navid S.
  • Fourth NREL conference on thermophotovoltaic generation of electricity, AIP Conference Proceedings
  • https://doi.org/10.1063/1.57796

Monolithically interconnected InGaAs TPV module development
conference, January 1996

Archie Rand and John Yau
journal, January 1993

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