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Title: Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

Abstract

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

Inventors:
 [1];  [1];  [1];  [2];  [3]
  1. (Golden, CO)
  2. (Littleton, CO)
  3. (Lakewood, CO)
Issue Date:
Research Org.:
Midwest Research Institute
OSTI Identifier:
873425
Patent Number(s):
6156395
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
plasma; enhanced; chemical; vapor; deposition; pecvd; method; forming; vanadium; oxide; films; thin-films; prepared; disclosed; film; substrate; utilizing; positioning; reaction; chamber; precursor; gas; comprised; vanadium-containing; chloride; inert; carrier; mixed; selected; amounts; hydrogen; oxygen; directed; optimize; final; properties; rf; generated; chemically; react; pressure; maintained; torr; finally; byproduct; gases; removed; enhanced chemical; inert carrier; chemically react; rf plasma; plasma reaction; plasma enhanced; vanadium oxide; product gases; oxide films; product gas; chemical vapor; carrier gas; reaction chamber; vapor deposition; oxide film; selected amount; chloride gas; films prepared; gas comprised; chamber deposition; /427/

Citation Formats

Zhang, Ji-Guang, Tracy, C. Edwin, Benson, David K., Turner, John A., and Liu, Ping. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby. United States: N. p., 2000. Web.
Zhang, Ji-Guang, Tracy, C. Edwin, Benson, David K., Turner, John A., & Liu, Ping. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby. United States.
Zhang, Ji-Guang, Tracy, C. Edwin, Benson, David K., Turner, John A., and Liu, Ping. Sat . "Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby". United States. https://www.osti.gov/servlets/purl/873425.
@article{osti_873425,
title = {Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby},
author = {Zhang, Ji-Guang and Tracy, C. Edwin and Benson, David K. and Turner, John A. and Liu, Ping},
abstractNote = {A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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