Photodiode arrays having minimized cross-talk between diodes
Abstract
Photodiode arrays are formed with close diode-to-diode spacing and minimized cross-talk between diodes in the array by isolating the diodes from one another with trenches that are formed between the photodiodes in the array. The photodiodes are formed of spaced regions in a base layer, each spaced region having an impurity type opposite to that of the base layer to define a p-n junction between the spaced regions and the base layer. The base layer meets a substrate at a boundary, with the substrate being much more heavily doped than the base layer with the same impurity type. The trenches extend through the base layer and preferably into the substrate. Minority carriers generated by absorption of light photons in the base layer can only migrate to an adjacent photodiode through the substrate. The lifetime and the corresponding diffusion length of the minority carriers in the substrate is very short so that all minority carriers recombine in the substrate before reaching an adjacent photodiode.
- Inventors:
-
- Madison, WI
- Issue Date:
- OSTI Identifier:
- 873318
- Patent Number(s):
- 6133615
- Application Number:
- 09/059,141
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- photodiode; arrays; minimized; cross-talk; diodes; formed; close; diode-to-diode; spacing; array; isolating; trenches; photodiodes; spaced; regions; base; layer; region; impurity; type; opposite; define; p-n; junction; meets; substrate; boundary; heavily; doped; extend; preferably; minority; carriers; generated; absorption; light; photons; migrate; adjacent; lifetime; corresponding; diffusion; length; recombine; reaching; diode arrays; photodiode array; photodiode arrays; p-n junction; heavily doped; diffusion length; diode array; minority carrier; base layer; minority carriers; carriers generated; minimized cross-talk; /257/
Citation Formats
Guckel, Henry, and McNamara, Shamus P. Photodiode arrays having minimized cross-talk between diodes. United States: N. p., 2000.
Web.
Guckel, Henry, & McNamara, Shamus P. Photodiode arrays having minimized cross-talk between diodes. United States.
Guckel, Henry, and McNamara, Shamus P. Tue .
"Photodiode arrays having minimized cross-talk between diodes". United States. https://www.osti.gov/servlets/purl/873318.
@article{osti_873318,
title = {Photodiode arrays having minimized cross-talk between diodes},
author = {Guckel, Henry and McNamara, Shamus P},
abstractNote = {Photodiode arrays are formed with close diode-to-diode spacing and minimized cross-talk between diodes in the array by isolating the diodes from one another with trenches that are formed between the photodiodes in the array. The photodiodes are formed of spaced regions in a base layer, each spaced region having an impurity type opposite to that of the base layer to define a p-n junction between the spaced regions and the base layer. The base layer meets a substrate at a boundary, with the substrate being much more heavily doped than the base layer with the same impurity type. The trenches extend through the base layer and preferably into the substrate. Minority carriers generated by absorption of light photons in the base layer can only migrate to an adjacent photodiode through the substrate. The lifetime and the corresponding diffusion length of the minority carriers in the substrate is very short so that all minority carriers recombine in the substrate before reaching an adjacent photodiode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 17 00:00:00 EDT 2000},
month = {Tue Oct 17 00:00:00 EDT 2000}
}