Monolithic pattern-sensitive detector
Abstract
Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.
- Inventors:
-
- Livermore, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873298
- Patent Number(s):
- 6130431
- Assignee:
- E.U.V., L.L.C. (Livermore, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- monolithic; pattern-sensitive; detector; extreme; ultraviolet; light; euv; detected; precisely; defined; reference; pattern; formed; shallow; junction; photodiode; absorber; preferably; comprising; nickel; material; euv-; spectral; region; attenuating; characteristics; euv-transmissive; energy; filter; disposed; passivation; oxide; layer; transmissive; device; monolithically; provide; robustness; compactness; preferably comprising; ultraviolet light; extreme ultraviolet; oxide layer; sensitive detector; comprising nickel; spectral region; pattern formed; shallow junction; reference pattern; violet light; /250/
Citation Formats
Berger, Kurt W. Monolithic pattern-sensitive detector. United States: N. p., 2000.
Web.
Berger, Kurt W. Monolithic pattern-sensitive detector. United States.
Berger, Kurt W. Sat .
"Monolithic pattern-sensitive detector". United States. https://www.osti.gov/servlets/purl/873298.
@article{osti_873298,
title = {Monolithic pattern-sensitive detector},
author = {Berger, Kurt W},
abstractNote = {Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}
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Works referenced in this record:
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- Journal of Electron Spectroscopy and Related Phenomena, Vol. 80
Normal incidence spectrophotometer with high-density transmission grating technology and high-efficiency silicon photodiodes for absolute solar extreme-ultraviolet irradiance measuremen
journal, January 1993
- Ogawa, Howard S.
- Optical Engineering, Vol. 32, Issue 12