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Title: Monolithic pattern-sensitive detector

Abstract

Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

Inventors:
 [1]
  1. (Livermore, CA)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873298
Patent Number(s):
6130431
Assignee:
E.U.V., L.L.C. (Livermore, CA) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
monolithic; pattern-sensitive; detector; extreme; ultraviolet; light; euv; detected; precisely; defined; reference; pattern; formed; shallow; junction; photodiode; absorber; preferably; comprising; nickel; material; euv-; spectral; region; attenuating; characteristics; euv-transmissive; energy; filter; disposed; passivation; oxide; layer; transmissive; device; monolithically; provide; robustness; compactness; preferably comprising; ultraviolet light; extreme ultraviolet; oxide layer; sensitive detector; comprising nickel; spectral region; pattern formed; shallow junction; reference pattern; violet light; /250/

Citation Formats

Berger, Kurt W. Monolithic pattern-sensitive detector. United States: N. p., 2000. Web.
Berger, Kurt W. Monolithic pattern-sensitive detector. United States.
Berger, Kurt W. Sat . "Monolithic pattern-sensitive detector". United States. https://www.osti.gov/servlets/purl/873298.
@article{osti_873298,
title = {Monolithic pattern-sensitive detector},
author = {Berger, Kurt W.},
abstractNote = {Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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