Monolithic pattern-sensitive detector

Title: Monolithic pattern-sensitive detector

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Abstract

Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

Inventors:

Berger, Kurt W. ^[1]

(Livermore, CA)

Issue Date:: 2000-01-01

Research Org.:: SANDIA CORP

OSTI Identifier:: 873298

Patent Number(s):: 6130431

Assignee:: E.U.V., L.L.C. (Livermore, CA) SNL

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: monolithic; pattern-sensitive; detector; extreme; ultraviolet; light; euv; detected; precisely; defined; reference; pattern; formed; shallow; junction; photodiode; absorber; preferably; comprising; nickel; material; euv-; spectral; region; attenuating; characteristics; euv-transmissive; energy; filter; disposed; passivation; oxide; layer; transmissive; device; monolithically; provide; robustness; compactness; preferably comprising; ultraviolet light; extreme ultraviolet; oxide layer; sensitive detector; comprising nickel; spectral region; pattern formed; shallow junction; reference pattern; violet light; /250/

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                    Berger, Kurt W. Monolithic pattern-sensitive detector.  United States: N. p., 2000. 
        Web.

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                    Berger, Kurt W. Monolithic pattern-sensitive detector.  United States.

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                    Berger, Kurt W. Sat .  
        "Monolithic pattern-sensitive detector".  United States.  https://www.osti.gov/servlets/purl/873298.

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@article{osti_873298,

  title        = {Monolithic pattern-sensitive detector},

  author       = {Berger, Kurt W.},

  abstractNote = {Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2000},

  month        = {1}

}

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