Title: Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films

Abstract

A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

Inventors:

Schulz, Douglas L ^[1]; Curtis, Calvin J ^[2]; Ginley, David S ^[3]

---

+ Show Inventor Affiliations

1. Denver, CO
2. Lakewood, CO
3. Evergreen, CO

Issue Date:

Sat Jan 01 00:00:00 EST 2000

Research Org.:

Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:

873277

Patent Number(s):

6126740

Assignee:

Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

Show more

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B17/20 - Methods for preparing sulfides or polysulfides, in general
C01B19/007 - {Tellurides or selenides of metals

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2002/01 - depicted by a TEM-image
C01P2002/02 - Amorphous compounds
C01P2004/64 - Nanometer sized, i.e. from 1-100 nanometer
C01P2006/22 - Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability

C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS

C03C17/22 - with other inorganic material
C03C2217/287 - Chalcogenides
C03C2218/113 - by sol-gel processes

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/46 - Sulfur-, selenium- or tellurium-containing compounds
C30B29/48 - AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te}
C30B5/00 - Single-crystal growth from gels

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02491 - {Conductive materials}
H01L21/02551 - {Group 12/16 materials}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02601 - {Nanoparticles
H01L21/02628 - {using solutions}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/773 - Nanoparticle, i.e. structure having three dimensions of 100 nm or less
Y10S977/813 - Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
Y10S977/89 - Deposition of materials, e.g. coating, cvd, or ald

Show less

DOE Contract Number:  

AC36-83CH10093

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

solution; synthesis; mixed-metal; chalcogenide; nanoparticles; spray; deposition; precursor; films; colloidal; suspension; comprising; metal; volatile; capping; agent; reacting; salt; organic; solvent; precipitate; recovering; admixing; deposited; substrate; produce; semiconductor; film; substantially; free; impurities; precursor film; precursor films; substantially free; organic solvent; metal salt; capping agent; colloidal suspension; metal chalcogenide; solution synthesis; spray deposited; chalcogenide nanoparticles; /117/252/