Silicon-integrated thin-film structure for electro-optic applications
Abstract
A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.
- Inventors:
-
- Kingston, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 873154
- Patent Number(s):
- 6103008
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
- DOE Contract Number:
- AC05-96OR22464
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- silicon-integrated; thin-film; structure; electro-optic; applications; crystalline; suited; phase; modulator; component; interferometer; semiconductor; substrate; silicon; ferroelectric; optically-clear; film; perovskite; batio; overlying; surface; characterized; substantially; dipole; moments; associated; arranged; parallel; enhance; qualities; semiconductor substrate; silicon substrate; substantially parallel; ferroelectric film; phase modulator; dipole moment; thin-film structure; electro-optic applications; dipole moments; /117/423/
Citation Formats
McKee, Rodney A, and Walker, Frederick Joseph. Silicon-integrated thin-film structure for electro-optic applications. United States: N. p., 2000.
Web.
McKee, Rodney A, & Walker, Frederick Joseph. Silicon-integrated thin-film structure for electro-optic applications. United States.
McKee, Rodney A, and Walker, Frederick Joseph. Sat .
"Silicon-integrated thin-film structure for electro-optic applications". United States. https://www.osti.gov/servlets/purl/873154.
@article{osti_873154,
title = {Silicon-integrated thin-film structure for electro-optic applications},
author = {McKee, Rodney A and Walker, Frederick Joseph},
abstractNote = {A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}
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Works referenced in this record:
Domain structure and polarization reversal in films of ferroelectric bismuth titanate
journal, February 1972
- Wu, S. Y.; Takei, W. J.; Francombe, M. H.
- Ferroelectrics, Vol. 3, Issue 1