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Title: Tuneable dielectric films having low electrical losses

Abstract

The present invention is directed to a method for forming dielectric thin films having substantially reduced electrical losses at microwave and millimeter wave frequencies relative to conventional dielectric thin films. The reduction in losses is realized by dramatically increasing the grain sizes of the dielectric films, thereby minimizing intergranular scattering of the microwave signal due to grain boundaries and point defects. The increase in grain size is realized by heating the film to a temperature at which the grains experience regrowth. The grain size of the films can be further increased by first depositing the films with an excess of one of the compoents, such that a highly mobile grain boundary phase is formed.

Inventors:
 [1];  [1];  [1];  [2];  [3];  [4]
  1. Albuquerque, NM
  2. Boise, ID
  3. Lakewood, CO
  4. Denver, CO
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
873121
Patent Number(s):
6096127
Assignee:
Superconducting Core Technologies, Inc. (Golden, CO)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01P - WAVEGUIDES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
tuneable; dielectric; films; electrical; losses; directed; method; forming; substantially; reduced; microwave; millimeter; wave; frequencies; relative; conventional; reduction; realized; dramatically; increasing; grain; sizes; minimizing; intergranular; scattering; signal; due; boundaries; defects; increase; size; heating; film; temperature; grains; experience; regrowth; increased; depositing; excess; compoents; highly; mobile; boundary; phase; formed; substantially reduced; microwave signal; grain boundaries; grain size; substantially reduce; grain boundary; millimeter wave; wave signal; reduced electric; grain sizes; reduced electrical; electrical losses; dielectric films; wave frequencies; /117/204/427/

Citation Formats

Dimos, Duane Brian, Schwartz, Robert William, Raymond, Mark Victor, Al-Shareef, Husam Niman, Mueller, Carl, and Galt, David. Tuneable dielectric films having low electrical losses. United States: N. p., 2000. Web.
Dimos, Duane Brian, Schwartz, Robert William, Raymond, Mark Victor, Al-Shareef, Husam Niman, Mueller, Carl, & Galt, David. Tuneable dielectric films having low electrical losses. United States.
Dimos, Duane Brian, Schwartz, Robert William, Raymond, Mark Victor, Al-Shareef, Husam Niman, Mueller, Carl, and Galt, David. Sat . "Tuneable dielectric films having low electrical losses". United States. https://www.osti.gov/servlets/purl/873121.
@article{osti_873121,
title = {Tuneable dielectric films having low electrical losses},
author = {Dimos, Duane Brian and Schwartz, Robert William and Raymond, Mark Victor and Al-Shareef, Husam Niman and Mueller, Carl and Galt, David},
abstractNote = {The present invention is directed to a method for forming dielectric thin films having substantially reduced electrical losses at microwave and millimeter wave frequencies relative to conventional dielectric thin films. The reduction in losses is realized by dramatically increasing the grain sizes of the dielectric films, thereby minimizing intergranular scattering of the microwave signal due to grain boundaries and point defects. The increase in grain size is realized by heating the film to a temperature at which the grains experience regrowth. The grain size of the films can be further increased by first depositing the films with an excess of one of the compoents, such that a highly mobile grain boundary phase is formed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Works referenced in this record:

Microwave Losses in Strontium Titanate above the Phase Transition
journal, March 1962


Preparation of Small-Grained and Large-Grained Ceramics from Nb-Doped BaTiO 3
journal, September 1971


Microstructure and ferroelectric properties of fine-grained Ba x Sr 1− x TiO 3 thin films prepared by metalorganic decomposition
journal, October 1996


The effect of annealing on the structure and dielectric properties of Ba x Sr 1− x TiO 3 ferroelectric thin films
journal, July 1996


Control of electrical conductivity in laser deposited SrTiO 3 thin films with Nb doping
journal, November 1994


Control of Liquid-Phase-Enhanced Discontinuous Grain Growth in Barium Titanate
journal, January 1987


Dielectric properties of fine‐grained barium titanate ceramics
journal, August 1985


(Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba 0.5 Sr 0.5 )TiO 3 thin films prepared by ion beam sputtering
journal, March 1994


Grain growth in donor-doped SrTiO 3
journal, June 1990