Method to improve commercial bonded SOI material
Abstract
A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.
- Inventors:
-
- Barrington, RI
- Pleasantville, NY
- Issue Date:
- Research Org.:
- Brown Univ., Providence, RI (United States)
- OSTI Identifier:
- 873087
- Patent Number(s):
- 6087242
- Application Number:
- 09/031289
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-86ER45267
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; improve; commercial; bonded; soi; material; improving; bonding; characteristics; previously; silicon; insulator; structure; provided; improvement; achieved; optionally; forming; oxide; cap; layer; surface; annealing; uncapped; capped; slightly; oxidizing; ambient; temperatures; 1200; degree; detecting; structures; according; aspect; pico-second; laser; pulse; technique; employed; determine; imperfections; cap layer; laser pulse; pulse technique; silicon surface; bonding characteristics; oxide cap; bonded silicon; /438/117/
Citation Formats
Maris, Humphrey John, and Sadana, Devendra Kumar. Method to improve commercial bonded SOI material. United States: N. p., 2000.
Web.
Maris, Humphrey John, & Sadana, Devendra Kumar. Method to improve commercial bonded SOI material. United States.
Maris, Humphrey John, and Sadana, Devendra Kumar. Tue .
"Method to improve commercial bonded SOI material". United States. https://www.osti.gov/servlets/purl/873087.
@article{osti_873087,
title = {Method to improve commercial bonded SOI material},
author = {Maris, Humphrey John and Sadana, Devendra Kumar},
abstractNote = {A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {7}
}
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