Thermally-induced voltage alteration for integrated circuit analysis
Abstract
A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.
- Inventors:
-
- (Albuquerque, NM)
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873048
- Patent Number(s):
- 6078183
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- thermally-induced; voltage; alteration; integrated; circuit; analysis; tiva; apparatus; method; disclosed; analyzing; device; substrate; locate; open-circuit; short-circuit; defects; therein; constant-current; biasing; scanning; focused; laser; beam; electrical; conductors; patterned; metallization; produce; localized; heating; produces; thermoelectric; potential; due; seebeck; effect; resistance; change; alter; power; demand; source; supply; providing; measuring; position; scanned; time; located; imaged; formed; optical; microscope; applications; qualification; testing; failure; ics; supply voltage; voltage alteration; optical microscope; localized heating; focused laser; electrical conductors; laser beam; power supply; integrated circuit; electric potential; electrical conductor; failure analysis; open-circuit defects; resistance change; circuit analysis; defects therein; supply providing; thermally-induced voltage; patterned metal; power demand; /324/
Citation Formats
Cole, Jr., Edward I. Thermally-induced voltage alteration for integrated circuit analysis. United States: N. p., 2000.
Web.
Cole, Jr., Edward I. Thermally-induced voltage alteration for integrated circuit analysis. United States.
Cole, Jr., Edward I. Sat .
"Thermally-induced voltage alteration for integrated circuit analysis". United States. https://www.osti.gov/servlets/purl/873048.
@article{osti_873048,
title = {Thermally-induced voltage alteration for integrated circuit analysis},
author = {Cole, Jr., Edward I.},
abstractNote = {A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}
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