Chemical vapor deposition of fluorine-doped zinc oxide
Abstract
Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.
- Inventors:
-
- Cambridge, MA
- Avon Lake, OH
- Santa Clara, CA
- Issue Date:
- OSTI Identifier:
- 873024
- Patent Number(s):
- 6071561
- Application Number:
- 09/242,093
- Assignee:
- President and Fellows of Harvard College (Cambridge, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- XAN-4-13318-05
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- chemical; vapor; deposition; fluorine-doped; zinc; oxide; fims; deposited; vaporized; precursor; compounds; comprising; chelate; dialkylzinc; amine; oxygen; source; fluorine; coatings; highly; electrically; conductive; transparent; visible; light; reflective; infrared; radiation; absorbing; ultraviolet; free; carbon; impurity; doped zinc; compounds comprising; zinc oxide; ultraviolet light; chemical vapor; electrically conductive; vapor deposition; visible light; infrared radiation; precursor compounds; precursor compound; highly electrically; fluorine-doped zinc; oxygen source; violet light; /427/
Citation Formats
Gordon, Roy G, Kramer, Keith, and Liang, Haifan. Chemical vapor deposition of fluorine-doped zinc oxide. United States: N. p., 2000.
Web.
Gordon, Roy G, Kramer, Keith, & Liang, Haifan. Chemical vapor deposition of fluorine-doped zinc oxide. United States.
Gordon, Roy G, Kramer, Keith, and Liang, Haifan. Sat .
"Chemical vapor deposition of fluorine-doped zinc oxide". United States. https://www.osti.gov/servlets/purl/873024.
@article{osti_873024,
title = {Chemical vapor deposition of fluorine-doped zinc oxide},
author = {Gordon, Roy G and Kramer, Keith and Liang, Haifan},
abstractNote = {Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}
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Works referenced in this record:
MOVPE Growth and optical characterization of high-quality ZnSe-ZnS superlattices using a novel zinc adduct precursor
journal, January 1994
- Briot, O.; Blasio, M. Di; Cloitre, T.
- MRS Proceedings, Vol. 340
Metalorganic chemical vapour deposition of oriented ZnO films
journal, May 1988
- Kaufmann, Th.; Fuchs, E.; Webert, M.
- Crystal Research and Technology, Vol. 23, Issue 5
The use of dimethylzinc-amine adducts for the p-doping of InP and related alloys
journal, May 1993
- Jones, A. C.; Rushworth, S. A.; O'Brien, P.
- Journal of Crystal Growth, Vol. 130, Issue 1-2