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Title: Method of making AlInSb by metal-organic chemical vapor deposition

Abstract

A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

Inventors:
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873022
Patent Number(s):
6071109
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; alinsb; metal-organic; chemical; vapor; deposition; producing; aluminum-indium-antimony; materials; mocvd; provides; 1-x; sb; crystalline; source; material; supplied; gas; heated; substrate; chamber; decomposing; partially; below; 525; degree; produce; 002; crystalline materials; crystalline material; source material; chemical vapor; vapor deposition; heated substrate; metal-organic chemical; organic chemical; /117/427/

Citation Formats

Biefeld, Robert M., Allerman, Andrew A., and Baucom, Kevin C. Method of making AlInSb by metal-organic chemical vapor deposition. United States: N. p., 2000. Web.
Biefeld, Robert M., Allerman, Andrew A., & Baucom, Kevin C. Method of making AlInSb by metal-organic chemical vapor deposition. United States.
Biefeld, Robert M., Allerman, Andrew A., and Baucom, Kevin C. Sat . "Method of making AlInSb by metal-organic chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/873022.
@article{osti_873022,
title = {Method of making AlInSb by metal-organic chemical vapor deposition},
author = {Biefeld, Robert M. and Allerman, Andrew A. and Baucom, Kevin C.},
abstractNote = {A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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