DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of making AlInSb by metal-organic chemical vapor deposition

Abstract

A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

Inventors:
 [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
873022
Patent Number(s):
6071109
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; alinsb; metal-organic; chemical; vapor; deposition; producing; aluminum-indium-antimony; materials; mocvd; provides; 1-x; sb; crystalline; source; material; supplied; gas; heated; substrate; chamber; decomposing; partially; below; 525; degree; produce; 002; crystalline materials; crystalline material; source material; chemical vapor; vapor deposition; heated substrate; metal-organic chemical; organic chemical; /117/427/

Citation Formats

Biefeld, Robert M, Allerman, Andrew A, and Baucom, Kevin C. Method of making AlInSb by metal-organic chemical vapor deposition. United States: N. p., 2000. Web.
Biefeld, Robert M, Allerman, Andrew A, & Baucom, Kevin C. Method of making AlInSb by metal-organic chemical vapor deposition. United States.
Biefeld, Robert M, Allerman, Andrew A, and Baucom, Kevin C. Sat . "Method of making AlInSb by metal-organic chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/873022.
@article{osti_873022,
title = {Method of making AlInSb by metal-organic chemical vapor deposition},
author = {Biefeld, Robert M and Allerman, Andrew A and Baucom, Kevin C},
abstractNote = {A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Works referenced in this record:

Growth of AlSb on insulating substrates by metal organics chemical vapour deposition
journal, March 1980


Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor
journal, June 1991


Mbe Growth of Strained-Layer InSb/InAlSb Structures
journal, January 1990


Demonstration of quantum confinement in InSb‐In 1− x Al x Sb multiquantum wells using photoluminescence spectroscopy
journal, August 1994


The growth of AlInSb by metalorganic chemical vapor deposition
journal, June 1998


Growth of n ‐ and p ‐type Al(As)Sb by metalorganic chemical vapor deposition
journal, February 1996


Tritertiarybutylaluminum as an organometallic source for epitaxial growth of AlGaSb
journal, September 1995


Metalorganic precursors for vapour phase epitaxy
journal, April 1993