Method and apparatus for electron-only radiation detectors from semiconductor materials
Abstract
A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.
- Inventors:
-
- 429 Warwick Ave., San Leandro, CA 94577
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873016
- Patent Number(s):
- 6069360
- Assignee:
- Lund, James C. (429 Warwick Ave., San Leandro, CA 94577)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; apparatus; electron-only; radiation; detectors; semiconductor; materials; obtaining; improved; resolution; temperature; cdznte; hgl; exhibit; significant; hole-trapping; electrical; reference; plane; established; perimeter; crystal; disposed; intermediately; oppositely; biased; electrodes; intermediate; comprises; narrow; strip; wire; contact; surface; potential; electrode; potentials; serving; auxiliary; chosen; electrode-typically; collector; mobile; charge; carrier; arrangement; eliminates; interfering; effects; carriers; gathered; reference plane; charge carrier; semiconductor materials; electrical contact; semiconductor material; radiation detector; radiation detectors; collector electrode; arrangement eliminates; electrode potential; improved resolution; semiconductor radiation; obtaining improved; narrow strip; temperature semiconductor; exhibit significant; semiconductor crystal; /250/257/
Citation Formats
Lund, James C. Method and apparatus for electron-only radiation detectors from semiconductor materials. United States: N. p., 2000.
Web.
Lund, James C. Method and apparatus for electron-only radiation detectors from semiconductor materials. United States.
Lund, James C. Sat .
"Method and apparatus for electron-only radiation detectors from semiconductor materials". United States. https://www.osti.gov/servlets/purl/873016.
@article{osti_873016,
title = {Method and apparatus for electron-only radiation detectors from semiconductor materials},
author = {Lund, James C},
abstractNote = {A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}
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