Thermophotovoltaic energy conversion system having a heavily doped n-type region

DePoy, David M; Charache, Greg W; Baldasaro, Paul F

Title: Thermophotovoltaic energy conversion system having a heavily doped n-type region

Abstract

A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

Inventors:

DePoy, David M ^[1]; Charache, Greg W ^[1]; Baldasaro, Paul F ^[1]

Clifton Park, NY

Issue Date:: 2000-01-01

Research Org.:: Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY (United States)

OSTI Identifier:: 872931

Patent Number(s):: 6043426

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02167 - {for solar cells}
H01L31/0693 - the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

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DOE Contract Number:: AC12-76SN00052

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: thermophotovoltaic; energy; conversion; heavily; doped; n-type; region; tpv; semiconductor; device; provided; incorporates; consequence; improved; efficiency; emitter; layer; opposed; base; contact; highly; cap; formed; embodiment; takes; doped n-type; cap layer; emitter layer; heavily doped; conversion efficiency; energy conversion; semiconductor device; base layer; highly doped; n-type region; conversion device; thermophotovoltaic energy; photovoltaic energy; /136/

Citation Formats


                    DePoy, David M, Charache, Greg W, and Baldasaro, Paul F. Thermophotovoltaic energy conversion system having a heavily doped n-type region.  United States: N. p., 2000. 
        Web.

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                    DePoy, David M, Charache, Greg W, & Baldasaro, Paul F. Thermophotovoltaic energy conversion system having a heavily doped n-type region.  United States.

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                    DePoy, David M, Charache, Greg W, and Baldasaro, Paul F. Sat .  
        "Thermophotovoltaic energy conversion system having a heavily doped n-type region".  United States.  https://www.osti.gov/servlets/purl/872931.

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@article{osti_872931,

  title        = {Thermophotovoltaic energy conversion system having a heavily doped n-type region},

  author       = {DePoy, David M and Charache, Greg W and Baldasaro, Paul F},

  abstractNote = {A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2000},

  month        = {1}

}

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Works referenced in this record:

Electrical and optical properties of degenerately-doped
conference, January 1997

Charache, Gw; DePoy, Dm; Egley, Jl
Third NREL Conference on thermophotovoltaic generation of electricity
https://doi.org/10.1063/1.53297

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Title: Thermophotovoltaic energy conversion system having a heavily doped n-type region

Abstract

Citation Formats

Electrical and optical properties of degenerately-doped conference, January 1997

Electrical and optical properties of degenerately-doped
conference, January 1997