Method for surface passivation and protection of cadmium zinc telluride crystals
Abstract
A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.
- Inventors:
-
- 5640 Hobart St., Apt. #9, Pittsburg, PA 15217
- 5420 Lenore Ave., Livermore, CA 94550
- 8 Carleton Dr., Mount Lebanon, PA 15243
- 3707 Carrigan Common, Livermore, CA 94550
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 872930
- Patent Number(s):
- 6043106
- Assignee:
- Mescher, Mark J. (5640 Hobart St., Apt. #9, Pittsburg, PA 15217);James, Ralph B. (5420 Lenore Ave., Livermore, CA 94550);Schlesinger, Tuviah E. (8 Carleton Dr., Mount Lebanon, PA 15243);Hermon, Haim (3707 Carrigan Common, Livermore, CA 94550)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; surface; passivation; protection; cadmium; zinc; telluride; crystals; reducing; leakage; current; czt; particularly; cd; 1-x; zn; equal; zero; preferably; enhancing; ability; crystal; spectrally; resolve; radiological; emissions; wide; variety; radionuclides; processes; disclosed; provides; depositing; via; reactive; sputtering; silicon; nitride; hard-coat; overlayer; significant; reduction; currents; enhances; oxidizing; oxygen; plasma; prior; deposition; breaking; vacuum; reactive sputtering; surface passivation; leakage currents; surface leakage; significant reduction; silicon nitride; wide variety; method provides; cadmium zinc; leakage current; method provide; oxygen plasma; zinc telluride; czt crystal; telluride crystal; surface pass; /438/
Citation Formats
Mescher, Mark J, James, Ralph B, Schlesinger, Tuviah E, and Hermon, Haim. Method for surface passivation and protection of cadmium zinc telluride crystals. United States: N. p., 2000.
Web.
Mescher, Mark J, James, Ralph B, Schlesinger, Tuviah E, & Hermon, Haim. Method for surface passivation and protection of cadmium zinc telluride crystals. United States.
Mescher, Mark J, James, Ralph B, Schlesinger, Tuviah E, and Hermon, Haim. Sat .
"Method for surface passivation and protection of cadmium zinc telluride crystals". United States. https://www.osti.gov/servlets/purl/872930.
@article{osti_872930,
title = {Method for surface passivation and protection of cadmium zinc telluride crystals},
author = {Mescher, Mark J and James, Ralph B and Schlesinger, Tuviah E and Hermon, Haim},
abstractNote = {A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}
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