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Title: Extreme ultraviolet lithography machine

Abstract

An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mountedmore » on a support structure and being isolated.« less

Inventors:
 [1];  [2];  [3];  [4]
  1. (Castro Valley, CA)
  2. (Livermore, CA)
  3. (Tracy, CA)
  4. (San Ramon, CA)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
872884
Patent Number(s):
6031598
Assignee:
Euv LLC (Santa Clara, CA) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
extreme; ultraviolet; lithography; machine; euvl; producing; integrated; circuit; components; transistors; formed; substrate; utilizes; laser; plasma; source; directed; via; optical; arrangement; mask; reticle; reflected; multiple; mirror; target; operates; 10-14; nm; wavelength; soft; x-ray; photon; basically; euv; evacuated; chamber; main; interconnected; transport; tube; beam; generator; produces; illumination; optics; connecting; projection; patterned; box; mounted; embodiment; nine; utilized; located; vibration; isolators; isolator; mounting; support; structure; isolated; transport tube; plasma generator; laser plasma; optical components; ultraviolet lithography; laser beam; extreme ultraviolet; integrated circuit; support structure; soft x-ray; projection optics; components located; optical component; optical arrangement; x-ray photon; /355/

Citation Formats

Tichenor, Daniel A., Kubiak, Glenn D., Haney, Steven J., and Sweeney, Donald W. Extreme ultraviolet lithography machine. United States: N. p., 2000. Web.
Tichenor, Daniel A., Kubiak, Glenn D., Haney, Steven J., & Sweeney, Donald W. Extreme ultraviolet lithography machine. United States.
Tichenor, Daniel A., Kubiak, Glenn D., Haney, Steven J., and Sweeney, Donald W. Sat . "Extreme ultraviolet lithography machine". United States. https://www.osti.gov/servlets/purl/872884.
@article{osti_872884,
title = {Extreme ultraviolet lithography machine},
author = {Tichenor, Daniel A. and Kubiak, Glenn D. and Haney, Steven J. and Sweeney, Donald W.},
abstractNote = {An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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