Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
Abstract
The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity siliconmore »
- Inventors:
-
- Hercules, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 872857
- Patent Number(s):
- 6025585
- Application Number:
- 08/961868
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- low-resistivity; photon-transparent; window; attached; photo-sensitive; silicon; detector; comprises; combination; resistivity; electrically; conducting; layer; transparent; wavelength; photons; backside; photon-sensitive; wafer; chip; applied; photon; sensitive; devices; photodiodes; charge-coupled; active; pixel; sensors; low-energy; x-ray; radiation; detectors; photosensitive; illuminate; device; interference; circuit; printed; frontside; voltage; sufficient; deplete; high-resistivity; volume; charge; carriers; front; patterned; allows; photon-induced; created; reach; processed; circuitry; inventive; thinned; standard; fabrication; methods; achieve; charge-depletion; embodiment; allow; illumination; maintaining; isolation; ccd; pixels; silicon device; charge carrier; transparent window; charge-coupled device; fabrication method; charge carriers; coupled device; silicon layer; electrically conducting; radiation detector; radiation detectors; silicon wafer; silicon devices; sensitive silicon; charge created; charge-coupled devices; photon sensitive; silicon detector; fabrication methods; resistivity photon; wavelength photons; low-energy x-ray; /250/257/
Citation Formats
Holland, Stephen Edward. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector. United States: N. p., 2000.
Web.
Holland, Stephen Edward. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector. United States.
Holland, Stephen Edward. Tue .
"Low-resistivity photon-transparent window attached to photo-sensitive silicon detector". United States. https://www.osti.gov/servlets/purl/872857.
@article{osti_872857,
title = {Low-resistivity photon-transparent window attached to photo-sensitive silicon detector},
author = {Holland, Stephen Edward},
abstractNote = {The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 15 00:00:00 EST 2000},
month = {Tue Feb 15 00:00:00 EST 2000}
}