Mask fabrication process
Abstract
A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.
- Inventors:
-
- Oakland, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 872818
- Patent Number(s):
- 6015640
- Assignee:
- EUV LLC (Santa Clara, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- mask; fabrication; process; method; fabricating; masks; reticles; useful; projection; lithography; systems; absorber; layer; conventionally; patterned; pattern; etch; following; step; patterning; entire; surface; remaining; top; photoresist; portion; underlying; protective; material; etched; exposed; radiation; uv-exposed; regions; removed; solution; eliminating; oxygen; plasma; strip; chances; damaging; substrate; coatings; projection lithography; fabrication process; absorber material; entire surface; absorber layer; lithography systems; plasma etch; oxygen plasma; sorber material; mask fabrication; /430/
Citation Formats
Cardinale, Gregory F. Mask fabrication process. United States: N. p., 2000.
Web.
Cardinale, Gregory F. Mask fabrication process. United States.
Cardinale, Gregory F. Sat .
"Mask fabrication process". United States. https://www.osti.gov/servlets/purl/872818.
@article{osti_872818,
title = {Mask fabrication process},
author = {Cardinale, Gregory F},
abstractNote = {A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}
Works referenced in this record:
Reflection mask technology for x-ray projection lithography
journal, November 1989
- Hawryluk, Andrew M.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 6
Reflective mask technologies and imaging results in soft x-ray projection lithography
journal, November 1991
- Tennant, D. M.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, Issue 6
Applications of microfabrication technology to x-ray laser cavities
journal, November 1988
- Hawryluk, Andrew M.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, Issue 6, Article No. 2153