Semiconductor diode with external field modulation
Abstract
A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 872811
- Patent Number(s):
- 6013950
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- semiconductor; diode; external; field; modulation; non-destructive-readout; nonvolatile; switching; device; memory; element; disclosed; formed; ferroelectric; material; disposed; rectifying; junction; control; conduction; characteristics; therein; means; remanent; polarization; formation; integrated; circuit; memories; storage; information; memory element; integrated circuit; material disposed; semiconductor diode; switching device; rectifying junction; nonvolatile semiconductor; ferroelectric material; external field; diode switching; /257/
Citation Formats
Nasby, Robert D. Semiconductor diode with external field modulation. United States: N. p., 2000.
Web.
Nasby, Robert D. Semiconductor diode with external field modulation. United States.
Nasby, Robert D. Sat .
"Semiconductor diode with external field modulation". United States. https://www.osti.gov/servlets/purl/872811.
@article{osti_872811,
title = {Semiconductor diode with external field modulation},
author = {Nasby, Robert D},
abstractNote = {A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}