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Title: Semiconductor diode with external field modulation

Abstract

A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

Inventors:
 [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
872811
Patent Number(s):
6013950
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; diode; external; field; modulation; non-destructive-readout; nonvolatile; switching; device; memory; element; disclosed; formed; ferroelectric; material; disposed; rectifying; junction; control; conduction; characteristics; therein; means; remanent; polarization; formation; integrated; circuit; memories; storage; information; memory element; integrated circuit; material disposed; semiconductor diode; switching device; rectifying junction; nonvolatile semiconductor; ferroelectric material; external field; diode switching; /257/

Citation Formats

Nasby, Robert D. Semiconductor diode with external field modulation. United States: N. p., 2000. Web.
Nasby, Robert D. Semiconductor diode with external field modulation. United States.
Nasby, Robert D. Sat . "Semiconductor diode with external field modulation". United States. https://www.osti.gov/servlets/purl/872811.
@article{osti_872811,
title = {Semiconductor diode with external field modulation},
author = {Nasby, Robert D.},
abstractNote = {A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Patent:

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