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Title: Capacitance pressure sensor

Abstract

A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).

Inventors:
 [1];  [2];  [2]
  1. Tijeras, NM
  2. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
872803
Patent Number(s):
6012336
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
capacitance; pressure; sensor; microelectromechanical; integrated; electronic; circuitry; common; substrate; method; forming; device; disclosed; formed; partially; cavity; etched; below; surface; silicon; adjacent; cmos; bicmos; bipolar; planarized; chemical-mechanical; polishing; standard; set; circuit; processing; steps; form; aluminum; aluminum-alloy; interconnect; metallization; chemical-mechanical polishing; common substrate; capacitance pressure; electronic circuit; silicon substrate; integrated circuit; electronic circuitry; pressure sensor; processing steps; processing step; cavity etched; mechanical polishing; /73/

Citation Formats

Eaton, William P, Staple, Bevan D, and Smith, James H. Capacitance pressure sensor. United States: N. p., 2000. Web.
Eaton, William P, Staple, Bevan D, & Smith, James H. Capacitance pressure sensor. United States.
Eaton, William P, Staple, Bevan D, and Smith, James H. Sat . "Capacitance pressure sensor". United States. https://www.osti.gov/servlets/purl/872803.
@article{osti_872803,
title = {Capacitance pressure sensor},
author = {Eaton, William P and Staple, Bevan D and Smith, James H},
abstractNote = {A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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Works referenced in this record:

Characterization of a surface micromachined pressure sensor array
conference, September 1995


CMOS-compatible surface-micromachined pressure sensor for aqueous ultrasonic application
conference, May 1995


A surface micromachined silicon accelerometer with on-chip detection circuitry
journal, October 1994