Infrared light sources with semimetal electron injection

Kurtz, Steven R; Biefeld, Robert M; Allerman, Andrew A

Title: Infrared light sources with semimetal electron injection

Abstract

An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.

Inventors:

Kurtz, Steven R ^[1]; Biefeld, Robert M ^[1]; Allerman, Andrew A ^[1]

Albuquerque, NM

Issue Date:: 1999-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 872719

Patent Number(s):: 5995529

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L33/30 - containing only elements of group III and group V of the periodic system

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/223 - Buried stripe structure {
H01S5/3211 - {characterised by special cladding layers, e.g. details on band-discontinuities}
H01S5/343 - in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
H01S5/34306 - {emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers}

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: infrared; light; sources; semimetal; electron; injection; source; disclosed; comprises; layered; semiconductor; active; region; quantum-well; layer; formed; interface; gaassb; galnsb; inassb; provides; electrons; holes; generate; predetermined; wavelength; range; 2-6; embodiments; electrically-activated; light-emitting; diodes; leds; lasers; optically-pumped; unipolar; multiple; regions; stacked; form; broadband; multiple-wavelength; emitting diodes; emitting diode; light-emitting diode; quantum-well layer; infrared light; predetermined wavelength; active region; light source; light sources; pumped laser; light-emitting diodes; semiconductor active; semimetal region; electron injection; sb layer; layered semiconductor; /372/257/

Citation Formats


                    Kurtz, Steven R, Biefeld, Robert M, and Allerman, Andrew A. Infrared light sources with semimetal electron injection.  United States: N. p., 1999. 
        Web.

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                    Kurtz, Steven R, Biefeld, Robert M, & Allerman, Andrew A. Infrared light sources with semimetal electron injection.  United States.

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                    Kurtz, Steven R, Biefeld, Robert M, and Allerman, Andrew A. Fri .  
        "Infrared light sources with semimetal electron injection".  United States.  https://www.osti.gov/servlets/purl/872719.

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@article{osti_872719,

  title        = {Infrared light sources with semimetal electron injection},

  author       = {Kurtz, Steven R and Biefeld, Robert M and Allerman, Andrew A},

  abstractNote = {An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1999},

  month        = {1}

}

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Works referenced in this record:

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm
journal, March 1996

Kurtz, S. R.; Biefeld, R. M.; Allerman, A. A.
Applied Physics Letters, Vol. 68, Issue 10
https://doi.org/10.1063/1.115925

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy
journal, October 1991

Menna, R. J.; Capewell, D. R.; Martinelli, Ramon U.
Applied Physics Letters, Vol. 59, Issue 17
https://doi.org/10.1063/1.106101

2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C
journal, September 1995

Garbuzov, D. Z.; Martinelli, R. U.; Menna, R. J.
Applied Physics Letters, Vol. 67, Issue 10
https://doi.org/10.1063/1.115546

Magnetophotoluminescence of biaxially compressed InAsSb quantum wells
journal, January 1995

Kurtz, S. R.; Biefeld, R. M.
Applied Physics Letters, Vol. 66, Issue 3
https://doi.org/10.1063/1.114214

InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm
journal, July 1995

Choi, H. K.; Turner, G. W.
Applied Physics Letters, Vol. 67, Issue 3
https://doi.org/10.1063/1.115435

Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
journal, February 1994

Kurtz, S. R.; Biefeld, R. M.; Dawson, L. R.
Applied Physics Letters, Vol. 64, Issue 7
https://doi.org/10.1063/1.111022

InAs _{1− x} Sb _x /In _{1− y} Ga _y As multiple‐quantum‐well heterostructure design for improved 4–5 μm lasers
journal, June 1994

Liau, Z. L.; Choi, H. K.
Applied Physics Letters, Vol. 64, Issue 24
https://doi.org/10.1063/1.111341

Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
journal, December 1995

Chow, D. H.; Miles, R. H.; Hasenberg, T. C.
Applied Physics Letters, Vol. 67, Issue 25
https://doi.org/10.1063/1.115354

InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
journal, July 1996

Allerman, A. A.; Biefeld, R. M.; Kurtz, S. R.
Applied Physics Letters, Vol. 69, Issue 4
https://doi.org/10.1063/1.118141

Growth of n ‐ and p ‐type Al(As)Sb by metalorganic chemical vapor deposition
journal, February 1996

Biefeld, R. M.; Allerman, A. A.; Pelczynski, M. W.
Applied Physics Letters, Vol. 68, Issue 7
https://doi.org/10.1063/1.116235

n ‐AlGaSb and GaSb/AlGaSb double‐heterostructure lasers grown by organometallic vapor phase epitaxy
journal, January 1996

Wang, C. A.; Jensen, K. F.; Jones, A. C.
Applied Physics Letters, Vol. 68, Issue 3
https://doi.org/10.1063/1.116698

Mid-IR interband cascade electroluminescence in type-II quantum wells
journal, January 1996

Yang, R. Q.; Lin, C. -H.; Chang, P. C.
Electronics Letters, Vol. 32, Issue 17
https://doi.org/10.1049/el:19961049

Type-II and type-I interband cascade lasers
journal, January 1996

Meyer, J. R.; Vurgaftman, I.; Yang, R. Q.
Electronics Letters, Vol. 32, Issue 1
https://doi.org/10.1049/el:19960064

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Similar Records

Title: Infrared light sources with semimetal electron injection

Abstract

Citation Formats

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm journal, March 1996

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy journal, October 1991

2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C journal, September 1995

Magnetophotoluminescence of biaxially compressed InAsSb quantum wells journal, January 1995

InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm journal, July 1995

Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions journal, February 1994

InAs 1− x Sb x /In 1− y Ga y As multiple‐quantum‐well heterostructure design for improved 4–5 μm lasers journal, June 1994

Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices journal, December 1995

InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition journal, July 1996

Growth of n ‐ and p ‐type Al(As)Sb by metalorganic chemical vapor deposition journal, February 1996

n ‐AlGaSb and GaSb/AlGaSb double‐heterostructure lasers grown by organometallic vapor phase epitaxy journal, January 1996

Mid-IR interband cascade electroluminescence in type-II quantum wells journal, January 1996

Type-II and type-I interband cascade lasers journal, January 1996

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm
journal, March 1996

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy
journal, October 1991

2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C
journal, September 1995

Magnetophotoluminescence of biaxially compressed InAsSb quantum wells
journal, January 1995

InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm
journal, July 1995

Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
journal, February 1994

InAs _{1− x} Sb _x /In _{1− y} Ga _y As multiple‐quantum‐well heterostructure design for improved 4–5 μm lasers
journal, June 1994

Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
journal, December 1995

InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
journal, July 1996

Growth of n ‐ and p ‐type Al(As)Sb by metalorganic chemical vapor deposition
journal, February 1996

n ‐AlGaSb and GaSb/AlGaSb double‐heterostructure lasers grown by organometallic vapor phase epitaxy
journal, January 1996

Mid-IR interband cascade electroluminescence in type-II quantum wells
journal, January 1996

Type-II and type-I interband cascade lasers
journal, January 1996