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Title: Infrared light sources with semimetal electron injection

Abstract

An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.

Inventors:
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
872719
Patent Number(s):
5995529
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
infrared; light; sources; semimetal; electron; injection; source; disclosed; comprises; layered; semiconductor; active; region; quantum-well; layer; formed; interface; gaassb; galnsb; inassb; provides; electrons; holes; generate; predetermined; wavelength; range; 2-6; embodiments; electrically-activated; light-emitting; diodes; leds; lasers; optically-pumped; unipolar; multiple; regions; stacked; form; broadband; multiple-wavelength; emitting diodes; emitting diode; light-emitting diode; quantum-well layer; infrared light; predetermined wavelength; active region; light source; light sources; pumped laser; light-emitting diodes; semiconductor active; semimetal region; electron injection; sb layer; layered semiconductor; /372/257/

Citation Formats

Kurtz, Steven R., Biefeld, Robert M., and Allerman, Andrew A. Infrared light sources with semimetal electron injection. United States: N. p., 1999. Web.
Kurtz, Steven R., Biefeld, Robert M., & Allerman, Andrew A. Infrared light sources with semimetal electron injection. United States.
Kurtz, Steven R., Biefeld, Robert M., and Allerman, Andrew A. Fri . "Infrared light sources with semimetal electron injection". United States. https://www.osti.gov/servlets/purl/872719.
@article{osti_872719,
title = {Infrared light sources with semimetal electron injection},
author = {Kurtz, Steven R. and Biefeld, Robert M. and Allerman, Andrew A.},
abstractNote = {An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

Patent:

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