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Title: Infrared light sources with semimetal electron injection

Abstract

An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.

Inventors:
 [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
872719
Patent Number(s):
5995529
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
infrared; light; sources; semimetal; electron; injection; source; disclosed; comprises; layered; semiconductor; active; region; quantum-well; layer; formed; interface; gaassb; galnsb; inassb; provides; electrons; holes; generate; predetermined; wavelength; range; 2-6; embodiments; electrically-activated; light-emitting; diodes; leds; lasers; optically-pumped; unipolar; multiple; regions; stacked; form; broadband; multiple-wavelength; emitting diodes; emitting diode; light-emitting diode; quantum-well layer; infrared light; predetermined wavelength; active region; light source; light sources; pumped laser; light-emitting diodes; semiconductor active; semimetal region; electron injection; sb layer; layered semiconductor; /372/257/

Citation Formats

Kurtz, Steven R, Biefeld, Robert M, and Allerman, Andrew A. Infrared light sources with semimetal electron injection. United States: N. p., 1999. Web.
Kurtz, Steven R, Biefeld, Robert M, & Allerman, Andrew A. Infrared light sources with semimetal electron injection. United States.
Kurtz, Steven R, Biefeld, Robert M, and Allerman, Andrew A. Fri . "Infrared light sources with semimetal electron injection". United States. https://www.osti.gov/servlets/purl/872719.
@article{osti_872719,
title = {Infrared light sources with semimetal electron injection},
author = {Kurtz, Steven R and Biefeld, Robert M and Allerman, Andrew A},
abstractNote = {An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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Works referenced in this record:

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm
journal, March 1996


3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy
journal, October 1991


2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C
journal, September 1995


Magnetophotoluminescence of biaxially compressed InAsSb quantum wells
journal, January 1995


InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm
journal, July 1995


Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
journal, February 1994


Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
journal, December 1995


Growth of n ‐ and p ‐type Al(As)Sb by metalorganic chemical vapor deposition
journal, February 1996


n ‐AlGaSb and GaSb/AlGaSb double‐heterostructure lasers grown by organometallic vapor phase epitaxy
journal, January 1996


Mid-IR interband cascade electroluminescence in type-II quantum wells
journal, January 1996


Type-II and type-I interband cascade lasers
journal, January 1996