Sharpening of field emitter tips using high-energy ions

Musket, Ronald G

Title: Sharpening of field emitter tips using high-energy ions

Abstract

A process for sharpening arrays of field emitter tips of field emission cathodes, such as found in field-emission, flat-panel video displays. The process uses sputtering by high-energy (more than 30 keV) ions incident along or near the longitudinal axis of the field emitter to sharpen the emitter with a taper from the tip or top of the emitter down to the shank of the emitter. The process is particularly applicable to sharpening tips of emitters having cylindrical or similar (e.g., pyramidal) symmetry. The process will sharpen tips down to radii of less than 12 nm with an included angle of about 20 degrees. Because the ions are incident along or near the longitudinal axis of each emitter, the tips of gated arrays can be sharpened by high-energy ion beams rastered over the arrays using standard ion implantation equipment. While the process is particularly applicable for sharpening of arrays of field emitters in field-emission flat-panel displays, it can be effectively utilized in the fabrication of other vacuum microelectronic devices that rely on field emission of electrons.

Inventors:

Musket, Ronald G ^[1]

Danville, CA

Issue Date:: 1999-01-01

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

OSTI Identifier:: 872698

Patent Number(s):: 5993281

Application Number:: 08/872031

Assignee:: Regents of University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J2209/0226 - Sharpening or resharpening of emitting point or edge
H01J9/025 - {of field emission cathodes}

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: sharpening; field; emitter; tips; high-energy; process; arrays; emission; cathodes; found; field-emission; flat-panel; video; displays; sputtering; 30; kev; incident; near; longitudinal; axis; sharpen; taper; tip; top; shank; particularly; applicable; emitters; cylindrical; similar; pyramidal; symmetry; radii; 12; nm; included; angle; 20; degrees; gated; sharpened; beams; rastered; standard; implantation; equipment; effectively; utilized; fabrication; vacuum; microelectronic; devices; rely; electrons; particularly applicable; field emission; longitudinal axis; electronic devices; field emitter; field emitters; panel displays; panel display; video display; emitter tips; emission cathode; emission cathodes; emission flat; electronic device; included angle; vacuum microelectronic; /445/

Citation Formats


                    Musket, Ronald G. Sharpening of field emitter tips using high-energy ions.  United States: N. p., 1999. 
        Web.

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                    Musket, Ronald G. Sharpening of field emitter tips using high-energy ions.  United States.

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                    Musket, Ronald G. Fri .  
        "Sharpening of field emitter tips using high-energy ions".  United States.  https://www.osti.gov/servlets/purl/872698.

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@article{osti_872698,

  title        = {Sharpening of field emitter tips using high-energy ions},

  author       = {Musket, Ronald G},

  abstractNote = {A process for sharpening arrays of field emitter tips of field emission cathodes, such as found in field-emission, flat-panel video displays. The process uses sputtering by high-energy (more than 30 keV) ions incident along or near the longitudinal axis of the field emitter to sharpen the emitter with a taper from the tip or top of the emitter down to the shank of the emitter. The process is particularly applicable to sharpening tips of emitters having cylindrical or similar (e.g., pyramidal) symmetry. The process will sharpen tips down to radii of less than 12 nm with an included angle of about 20 degrees. Because the ions are incident along or near the longitudinal axis of each emitter, the tips of gated arrays can be sharpened by high-energy ion beams rastered over the arrays using standard ion implantation equipment. While the process is particularly applicable for sharpening of arrays of field emitters in field-emission flat-panel displays, it can be effectively utilized in the fabrication of other vacuum microelectronic devices that rely on field emission of electrons.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1999},

  month        = {1}

}

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Works referenced in this record:

Modification of field emitter array (FEA) tip shape by focused ion beam irradiation
conference, August 2002

Takai, M.; Kishimoto, T.; Yamashita, M.
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)
https://doi.org/10.1109/IVMC.1995.486988

Ion bombardment sharpening of field emitter arrays
conference, January 1995

Auciello, O.; Yadon, L.; Temple, D.
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)
https://doi.org/10.1109/IVMC.1995.487023

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Title: Sharpening of field emitter tips using high-energy ions

Abstract

Citation Formats

Modification of field emitter array (FEA) tip shape by focused ion beam irradiation conference, August 2002

Ion bombardment sharpening of field emitter arrays conference, January 1995

Modification of field emitter array (FEA) tip shape by focused ion beam irradiation
conference, August 2002

Ion bombardment sharpening of field emitter arrays
conference, January 1995