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Title: High efficiency photovoltaic device

Abstract

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Inventors:
 [1];  [1];  [2]
+ Show Inventor Affiliations
  1. Troy, MI
  2. Findlay, OH
Issue Date:
OSTI Identifier:
872631
Patent Number(s):
5977476
Application Number:
08/731,497
Assignee:
United Solar Systems Corporation (Troy, MI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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DOE Contract Number:  
ZAN-4-13318-02
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
efficiency; photovoltaic; device; n-i-p; type; multi-layered; n-doped; semiconductor; material; amorphous; doped; layer; contact; intrinsic; microcrystalline; overlying; tandem; comprising; stacked; cells; interposed; devices; configured; manifest; improved; performance; particularly; improved performance; photovoltaic devices; semiconductor material; photovoltaic device; device comprising; doped layer; intrinsic semiconductor; efficiency photovoltaic; layer overlying; layer interposed; /136/

Citation Formats

Guha, Subhendu, Yang, Chi C, and Xu, Xi Xiang. High efficiency photovoltaic device. United States: N. p., 1999. Web.
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Guha, Subhendu, Yang, Chi C, & Xu, Xi Xiang. High efficiency photovoltaic device. United States.
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Guha, Subhendu, Yang, Chi C, and Xu, Xi Xiang. Tue . "High efficiency photovoltaic device". United States. https://www.osti.gov/servlets/purl/872631.
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@article{osti_872631,
title = {High efficiency photovoltaic device},
author = {Guha, Subhendu and Yang, Chi C and Xu, Xi Xiang},
abstractNote = {An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 02 00:00:00 EST 1999},
month = {Tue Nov 02 00:00:00 EST 1999}
}
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