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Title: Reflective optical imaging system with balanced distortion

Abstract

An optical system compatible with short wavelength (extreme ultraviolet) An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput and allows higher semiconductor device density. The inventive optical system is characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

Inventors:
 [1];  [2];  [3];  [2]
  1. (Sunol, CA)
  2. (San Ramon, CA)
  3. (Fairfield, CT)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
872615
Patent Number(s):
5973826
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
reflective; optical; imaging; balanced; distortion; compatible; wavelength; extreme; ultraviolet; radiation; comprising; elements; projecting; mask; image; substrate; comprise; convex; concave; mirrors; particularly; suited; step; scan; lithography; methods; enables; larger; slit; dimensions; associated; field; scanning; optics; improves; wafer; throughput; allows; semiconductor; device; density; inventive; characterized; reduced; dynamic; static; width; reflective elements; concave mirrors; mask image; scan lithography; lithography methods; reflective optical; optical imaging; particularly suited; optical element; optical elements; extreme ultraviolet; semiconductor device; concave mirror; radiation comprising; reduced dynamic; slit width; reflective element; static distortion; slit dimensions; scanning optics; device density; wafer throughput; dimensions associated; improves wafer; dynamic distortion; field scanning; elements comprise; balanced distortion; /359/

Citation Formats

Chapman, Henry N., Hudyma, Russell M., Shafer, David R., and Sweeney, Donald W. Reflective optical imaging system with balanced distortion. United States: N. p., 1999. Web.
Chapman, Henry N., Hudyma, Russell M., Shafer, David R., & Sweeney, Donald W. Reflective optical imaging system with balanced distortion. United States.
Chapman, Henry N., Hudyma, Russell M., Shafer, David R., and Sweeney, Donald W. Fri . "Reflective optical imaging system with balanced distortion". United States. https://www.osti.gov/servlets/purl/872615.
@article{osti_872615,
title = {Reflective optical imaging system with balanced distortion},
author = {Chapman, Henry N. and Hudyma, Russell M. and Shafer, David R. and Sweeney, Donald W.},
abstractNote = {An optical system compatible with short wavelength (extreme ultraviolet) An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput and allows higher semiconductor device density. The inventive optical system is characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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