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Title: Thermovoltaic semiconductor device including a plasma filter

Abstract

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Inventors:
 [1]
  1. Clifton Park, NY
Issue Date:
Research Org.:
Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
OSTI Identifier:
872547
Patent Number(s):
5959239
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thermovoltaic; semiconductor; device; including; plasma; filter; energy; conversion; related; method; converting; thermal; electrical; potential; interference; provided; cell; pre-filter; black; radiation; junction; supported; substrate; converts; incident; below; band; gap; doped; provide; reflects; wavelength; ineffectively; filtered; source; avoiding; parasitic; absorption; unusable; portion; radiation energy; related method; interference filter; thermal radiation; electrical potential; band gap; semiconductor substrate; thermal energy; energy conversion; semiconductor device; device including; conversion device; thermovoltaic energy; semiconductor junction; plasma filter; thermovoltaic cell; converting thermal; /136/

Citation Formats

Baldasaro, Paul F. Thermovoltaic semiconductor device including a plasma filter. United States: N. p., 1999. Web.
Baldasaro, Paul F. Thermovoltaic semiconductor device including a plasma filter. United States.
Baldasaro, Paul F. Fri . "Thermovoltaic semiconductor device including a plasma filter". United States. https://www.osti.gov/servlets/purl/872547.
@article{osti_872547,
title = {Thermovoltaic semiconductor device including a plasma filter},
author = {Baldasaro, Paul F},
abstractNote = {A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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