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Title: Focused ion beam system

Abstract

A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

Inventors:
 [1];  [2];  [3];  [3]
  1. Hercules, CA
  2. Kensington, CA
  3. Berkeley, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
872490
Patent Number(s):
5945677
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
focused; beam; fib; produces; final; spot; size; output; current; microamps; increases; source; brightness; properly; configuring; plasma; extraction; electrodes; electrode; configured; aperture; diameter; thickness; aspect; ratio; additional; accelerator; focusing; produce; five; providing; compact; length; 20; multibeamlet; arrangements; single; produced; increase; throughput; nanolithography; doping; applications; fabrication; semiconductor; devices; minimum; feature; sizes; beam output; output current; aspect ratio; semiconductor device; semiconductor devices; spot size; feature sizes; final beam; /250/

Citation Formats

Leung, Ka-Ngo, Gough, Richard A, Ji, Qing, and Lee, Yung-Hee Yvette. Focused ion beam system. United States: N. p., 1999. Web.
Leung, Ka-Ngo, Gough, Richard A, Ji, Qing, & Lee, Yung-Hee Yvette. Focused ion beam system. United States.
Leung, Ka-Ngo, Gough, Richard A, Ji, Qing, and Lee, Yung-Hee Yvette. Fri . "Focused ion beam system". United States. https://www.osti.gov/servlets/purl/872490.
@article{osti_872490,
title = {Focused ion beam system},
author = {Leung, Ka-Ngo and Gough, Richard A and Ji, Qing and Lee, Yung-Hee Yvette},
abstractNote = {A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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