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Title: Phosphorous doping a semiconductor particle

Abstract

A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

Inventors:
 [1];  [2]
  1. 18912 Ravenglen Ct, Dallas, TX 75287
  2. 703 Horizon, Murphy, TX 75094
Issue Date:
OSTI Identifier:
872399
Patent Number(s):
5926727
Application Number:
08/570,028
Assignee:
Stevens, Gary Don (18912 Ravenglen Ct, Dallas, TX 75287);Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
ZAI-4-11294-04
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
phosphorous; doping; semiconductor; particle; method; 10; phosphorus; ammonium; phosphate; p-doped; silicon; sphere; mixed; diluted; solution; predetermined; concentration; spheres; dried; 16; 18; diffused; 20; create; shallow; deep; p-n; junction; psg; glass; layer; formed; surface; diffusion; process; subsequent; segregation; anneal; utilized; strip; metal; impurities; near; hf; procedure; removed; restricted; chemical; inexpensive; pose; special; shipping; handling; disposal; requirement; p-n junction; doped silicon; ammonium phosphate; metal impurities; semiconductor particle; predetermined concentration; silicon sphere; strip metal; diffusion process; diluted solution; /438/

Citation Formats

Stevens, Gary Don, and Reynolds, Jeffrey Scott. Phosphorous doping a semiconductor particle. United States: N. p., 1999. Web.
Stevens, Gary Don, & Reynolds, Jeffrey Scott. Phosphorous doping a semiconductor particle. United States.
Stevens, Gary Don, and Reynolds, Jeffrey Scott. Tue . "Phosphorous doping a semiconductor particle". United States. https://www.osti.gov/servlets/purl/872399.
@article{osti_872399,
title = {Phosphorous doping a semiconductor particle},
author = {Stevens, Gary Don and Reynolds, Jeffrey Scott},
abstractNote = {A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {7}
}

Patent:

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