Deposition of dopant impurities and pulsed energy drive-in
Abstract
A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
- Inventors:
-
- Walnut Creek, CA
- Mountain View, CA
- San Ramon, CA
- Fremont, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 872363
- Patent Number(s):
- 5918140
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- deposition; dopant; impurities; pulsed; energy; drive-in; semiconductor; doping; process; enhances; incorporation; achievable; gas; immersion; laser; gild; technique; enhanced; achieved; depositing; layer; atoms; surface; followed; exposure; pulses; ion-beam; melt; portion; desired; depth; causing; incorporated; molten; region; recrystallizes; electrically; active; deposited; plasma; chemical; vapor; pecvd; techniques; pulsed energy; enhanced chemical; plasma enhanced; chemical vapor; vapor deposition; semiconductor surface; deposition techniques; electrically active; desired depth; deposition technique; semiconductor doping; laser doping; dopant impurities; doping process; /438/
Citation Formats
Wickboldt, Paul, Carey, Paul G, Smith, Patrick M, and Ellingboe, Albert R. Deposition of dopant impurities and pulsed energy drive-in. United States: N. p., 1999.
Web.
Wickboldt, Paul, Carey, Paul G, Smith, Patrick M, & Ellingboe, Albert R. Deposition of dopant impurities and pulsed energy drive-in. United States.
Wickboldt, Paul, Carey, Paul G, Smith, Patrick M, and Ellingboe, Albert R. Fri .
"Deposition of dopant impurities and pulsed energy drive-in". United States. https://www.osti.gov/servlets/purl/872363.
@article{osti_872363,
title = {Deposition of dopant impurities and pulsed energy drive-in},
author = {Wickboldt, Paul and Carey, Paul G and Smith, Patrick M and Ellingboe, Albert R},
abstractNote = {A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}
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