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Title: Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

Abstract

A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet ("DUV") and Extreme Ultra-Violet ("EUV") wavelengths. The method results in a product with minimum feature sizes of less than 0.10-.mu.m for the shortest wavelength (13.4-nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R.sup.2 factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates.

Inventors:
 [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
872327
Patent Number(s):
5911858
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; high-precision; multi-layered; film; deposition; deep; extreme; ultraviolet; mirrors; coating; flat; non-flat; optical; substrates; high-reflectivity; multi-layer; coatings; ultra-violet; duv; euv; wavelengths; results; product; minimum; feature; sizes; 10-; shortest; wavelength; 13; 4-nm; employs; computer-based; modeling; enable; lateral; vertical; thickness; control; scanning; position; substrate; respect; sputter; target; profile; targets; modeled; appropriate; algorithm; implemented; produce; desired; radially-symmetric; offers; ability; predict; achieve; wide; range; profiles; figured; account; factor; model; accommodate; changes; rate; result; plasma; geometry; optical substrates; deposition method; film deposition; extreme ultraviolet; wide range; deposition rate; optical substrate; sputter target; sputter targets; method results; feature sizes; extreme ultra-violet; multi-layer coating; deep ultra-violet; /204/

Citation Formats

Ruffner, Judith Alison. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors. United States: N. p., 1999. Web.
Ruffner, Judith Alison. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors. United States.
Ruffner, Judith Alison. Fri . "Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors". United States. https://www.osti.gov/servlets/purl/872327.
@article{osti_872327,
title = {Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors},
author = {Ruffner, Judith Alison},
abstractNote = {A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet ("DUV") and Extreme Ultra-Violet ("EUV") wavelengths. The method results in a product with minimum feature sizes of less than 0.10-.mu.m for the shortest wavelength (13.4-nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R.sup.2 factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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