VO.sub.2 precipitates for self-protected optical surfaces
Abstract
A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al.sub.2 O.sub.3), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO.sub.2 precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al.sub.2 O.sub.3 host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at .about.77.degree. C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally "switchable" surface region on Al.sub.2 O.sub.3.
- Inventors:
-
- Knoxville, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 872208
- Patent Number(s):
- 5885665
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- DOE Contract Number:
- AC05-96OR22464
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- vo; precipitates; self-protected; optical; surfaces; method; forming; crystallographically; coherent; vanadium; dioxide; near-surface; region; sapphire; resulting; product; disclosed; oxygen; stoichiometrically; implanted; substrate; subsequently; annealed; form; embedded; three-dimensionally; oriented; respect; crystal; axes; host; lattice; undergo; first-order; monoclinic-to-tetragonal; semiconducting-to-metallic; phase; transition; 77; degree; transformation; accompanied; significant; variation; transmission; results; formation; optically; active; thermally; switchable; surface; optical transmission; surface region; resulting product; optically active; phase transition; optical surfaces; near-surface region; optical surface; implanted region; sapphire substrate; /427/117/
Citation Formats
Gea, Laurence A, and Boatner, Lynn A. VO.sub.2 precipitates for self-protected optical surfaces. United States: N. p., 1999.
Web.
Gea, Laurence A, & Boatner, Lynn A. VO.sub.2 precipitates for self-protected optical surfaces. United States.
Gea, Laurence A, and Boatner, Lynn A. Fri .
"VO.sub.2 precipitates for self-protected optical surfaces". United States. https://www.osti.gov/servlets/purl/872208.
@article{osti_872208,
title = {VO.sub.2 precipitates for self-protected optical surfaces},
author = {Gea, Laurence A and Boatner, Lynn A},
abstractNote = {A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al.sub.2 O.sub.3), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO.sub.2 precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al.sub.2 O.sub.3 host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at .about.77.degree. C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally "switchable" surface region on Al.sub.2 O.sub.3.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}
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Works referenced in this record:
Preparation of VO_2 thin film and its direct optical bit recording characteristics
journal, January 1983
- Fukuma, Masaharu; Zembutsu, Sakae; Miyazawa, Shintaro
- Applied Optics, Vol. 22, Issue 2
Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
journal, July 1959
- Morin, F. J.
- Physical Review Letters, Vol. 3, Issue 1
Optical induction and detection of fast phase transition in VO2
journal, May 1971
- Roach, W. R.; Balberg, I.
- Solid State Communications, Vol. 9, Issue 9
Optical Properties of V between 0.25 and 5 eV
journal, August 1968
- Verleur, Hans W.; Barker, A. S.; Berglund, C. N.
- Physical Review, Vol. 172, Issue 3
Fast laser kinetic studies of the semiconductor-metal phase transition in VO2 thin films
conference, January 1979
- Walser, R. M.; Becker, M. F.
- AIP Conference Proceedings Vol. 50
Femtosecond switching of the solid state phase transition in the smart-system material VO<formula><inf><roman>2</roman></inf></formula>
conference, May 1994
- Becker, Michael F.; Buckman, A. B.; Walser, Rodger M.
- 1994 North American Conference on Smart Structures and Materials, SPIE Proceedings
A 10.6 µm scan laser with programmable VO 2 mirror
journal, December 1979
- Chivian, J.; Case, W.; Rester, D.
- IEEE Journal of Quantum Electronics, Vol. 15, Issue 12
Optical switching of coherent VO 2 precipitates formed in sapphire by ion implantation and annealing
journal, May 1996
- Gea, Laurence A.; Boatner, L. A.
- Applied Physics Letters, Vol. 68, Issue 22
Optical storage in VO 2 films
journal, October 1973
- Smith, A. W.
- Applied Physics Letters, Vol. 23, Issue 8