Optical method for the determination of stress in thin films
Abstract
A method and optical system is disclosed for measuring an amount of stress in a film layer disposed over a substrate. The method includes steps of: (A) applying a sequence of optical pump pulses to the film layer, individual ones of said optical pump pulses inducing a propagating strain pulse in the film layer, and for each of the optical pump pulses, applying at least one optical probe pulse, the optical probe pulses being applied with different time delays after the application of the corresponding optical probe pulses; (B) detecting variations in an intensity of a reflection of portions of the optical probe pulses, the variations being due at least in part to the propagation of the strain pulse in the film layer; (C) determining, from the detected intensity variations, a sound velocity in the film layer; and (D) calculating, using the determined sound velocity, the amount of stress in the film layer. In one embodiment of this invention the step of detecting measures a period of an oscillation in the intensity of the reflection of portions of the optical probe pulses, while in another embodiment the step of detecting measures a change in intensity of the reflection of portionsmore »
- Inventors:
-
- Barrington, RI
- Issue Date:
- Research Org.:
- Brown Univ., Providence, RI (United States)
- OSTI Identifier:
- 872118
- Patent Number(s):
- 5864393
- Assignee:
- Brown University Research Foundation (Providence, RI)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01L - MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- DOE Contract Number:
- FG02-86ER45267
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- optical; method; determination; stress; films; disclosed; measuring; amount; film; layer; disposed; substrate; steps; applying; sequence; pump; pulses; individual; ones; inducing; propagating; strain; pulse; probe; applied; time; delays; application; corresponding; detecting; variations; intensity; reflection; portions; due; propagation; determining; detected; sound; velocity; calculating; determined; embodiment; step; measures; period; oscillation; change; determines; reflects; boundary; layer disposed; probe pulse; time delays; optical method; optical pump; intensity variations; pump pulse; time delay; optical probe; film layer; sound velocity; individual ones; responding optical; detecting variations; /356/73/
Citation Formats
Maris, Humphrey J. Optical method for the determination of stress in thin films. United States: N. p., 1999.
Web.
Maris, Humphrey J. Optical method for the determination of stress in thin films. United States.
Maris, Humphrey J. Fri .
"Optical method for the determination of stress in thin films". United States. https://www.osti.gov/servlets/purl/872118.
@article{osti_872118,
title = {Optical method for the determination of stress in thin films},
author = {Maris, Humphrey J},
abstractNote = {A method and optical system is disclosed for measuring an amount of stress in a film layer disposed over a substrate. The method includes steps of: (A) applying a sequence of optical pump pulses to the film layer, individual ones of said optical pump pulses inducing a propagating strain pulse in the film layer, and for each of the optical pump pulses, applying at least one optical probe pulse, the optical probe pulses being applied with different time delays after the application of the corresponding optical probe pulses; (B) detecting variations in an intensity of a reflection of portions of the optical probe pulses, the variations being due at least in part to the propagation of the strain pulse in the film layer; (C) determining, from the detected intensity variations, a sound velocity in the film layer; and (D) calculating, using the determined sound velocity, the amount of stress in the film layer. In one embodiment of this invention the step of detecting measures a period of an oscillation in the intensity of the reflection of portions of the optical probe pulses, while in another embodiment the step of detecting measures a change in intensity of the reflection of portions of the optical probe pulses and determines a time at which the propagating strain pulse reflects from a boundary of the film layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}
Works referenced in this record:
Picosecond transient grating studies of polymeric thin films
journal, February 1986
- Rao, D. Narayana; Burzynski, Ryszard; Mi, Xin
- Applied Physics Letters, Vol. 48, Issue 6
Physics of ultrafast phenomena in solid state plasmas
journal, January 1978
- Elci, Ahmet; Smirl, Arthur L.; Leung, C. Y.
- Solid-State Electronics, Vol. 21, Issue 1
Ion implant monitoring with thermal wave technology
journal, September 1985
- Smith, W. Lee; Rosencwaig, Allan; Willenborg, David L.
- Applied Physics Letters, Vol. 47, Issue 6
Third order nonlinear optical interactions in thin films of poly‐ p ‐phenylenebenzobisthiazole polymer investigated by picosecond and subpicosecond degenerate four wave mixing
journal, May 1986
- Rao, D. Narayana; Swiatkiewicz, Jacek; Chopra, Pratibha
- Applied Physics Letters, Vol. 48, Issue 18
Detection of thermal waves through optical reflectance
journal, June 1985
- Rosencwaig, Allan; Opsal, Jon; Smith, W. L.
- Applied Physics Letters, Vol. 46, Issue 11
Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium
journal, May 1974
- Auston, D. H.; Shank, C. V.
- Physical Review Letters, Vol. 32, Issue 20
Thermal and plasma wave depth profiling in silicon
journal, September 1985
- Opsal, Jon; Rosencwaig, Allan
- Applied Physics Letters, Vol. 47, Issue 5
Thin‐film thickness measurements with thermal waves
journal, July 1983
- Rosencwaig, Allan; Opsal, Jon; Willenborg, David L.
- Applied Physics Letters, Vol. 43, Issue 2
Carrier lifetime versus ion‐implantation dose in silicon on sapphire
journal, February 1987
- Doany, F. E.; Grischkowsky, D.; Chi, C. ‐C.
- Applied Physics Letters, Vol. 50, Issue 8
Picosecond spectroscopy of semiconductors
journal, January 1978
- Auston, D. H.; McAfee, S.; Shank, C. V.
- Solid-State Electronics, Vol. 21, Issue 1
Analysis of lattice defects induced by ion implantation with photo‐acoustic displacement measurements
journal, November 1994
- Sumie, Shingo; Takamatsu, Hiroyuki; Morimoto, Tsutomu
- Journal of Applied Physics, Vol. 76, Issue 10
Measurements of the Kapitza conductance between diamond and several metals
journal, March 1992
- Stoner, R. J.; Maris, H. J.; Anthony, T. R.
- Physical Review Letters, Vol. 68, Issue 10
Kapitza conductance and heat flow between solids at temperatures from 50 to 300 K
journal, December 1993
- Stoner, R. J.; Maris, H. J.
- Physical Review B, Vol. 48, Issue 22
A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
journal, November 1992
- Sumie, Shingo; Takamatsu, Hiroyuki; Nishimoto, Yoshiro
- Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 11