Method for altering the luminescence of a semiconductor
Abstract
A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 872098
- Patent Number(s):
- 5858559
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; altering; luminescence; semiconductor; described; light; emitting; device; particular; whereby; silicon; selectively; irradiated; radiation; source; effective; intensity; region; radiation source; light emitting; emitting semiconductor; bed whereby; described whereby; /428/438/
Citation Formats
Barbour, J Charles, and Dimos, Duane B. Method for altering the luminescence of a semiconductor. United States: N. p., 1999.
Web.
Barbour, J Charles, & Dimos, Duane B. Method for altering the luminescence of a semiconductor. United States.
Barbour, J Charles, and Dimos, Duane B. Fri .
"Method for altering the luminescence of a semiconductor". United States. https://www.osti.gov/servlets/purl/872098.
@article{osti_872098,
title = {Method for altering the luminescence of a semiconductor},
author = {Barbour, J Charles and Dimos, Duane B},
abstractNote = {A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}
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