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Title: Method for altering the luminescence of a semiconductor

Abstract

A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
872098
Patent Number(s):
5858559
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; altering; luminescence; semiconductor; described; light; emitting; device; particular; whereby; silicon; selectively; irradiated; radiation; source; effective; intensity; region; radiation source; light emitting; emitting semiconductor; bed whereby; described whereby; /428/438/

Citation Formats

Barbour, J Charles, and Dimos, Duane B. Method for altering the luminescence of a semiconductor. United States: N. p., 1999. Web.
Barbour, J Charles, & Dimos, Duane B. Method for altering the luminescence of a semiconductor. United States.
Barbour, J Charles, and Dimos, Duane B. Fri . "Method for altering the luminescence of a semiconductor". United States. https://www.osti.gov/servlets/purl/872098.
@article{osti_872098,
title = {Method for altering the luminescence of a semiconductor},
author = {Barbour, J Charles and Dimos, Duane B},
abstractNote = {A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

Patent:

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Works referenced in this record:

Three-Dimensional Quantum Well Effects in Ultrafine Silicon Particles
journal, November 1988


Putting Some Spark in Silicon
journal, May 1991


Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
journal, September 1990


Quantum size effects on the optical band gap of microcrystalline Si:H
journal, September 1988


Porous silicon oxynitrides formed by ammonia heat treatment
journal, April 1990


Quantum size effects on photoluminescence in ultrafine Si particles
journal, June 1990