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Title: Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders

Abstract

A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

Inventors:
 [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
872096
Patent Number(s):
5858451
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; production; solution-derived; pb; nb; zr; films; powders; simple; rapid; synthesizing; precursor; solutions; subsequent; ferroelectric; perovskite; phase; materials; developed; offers; advantages; standard; methods; including; solution; synthesis; 10; minutes; commercially; available; film; ambient; conditions; ease; lanthanum; dissolution; concentrations; heating; requirements; lanthanum-doped; source; added; total; time; crystallized; approximately; 650; degree; exhibit; properties; comparable; produced; techniques; require; crystallization; temperatures; ambient conditions; precursor solution; commercially available; precursor solutions; solution synthesis; available materials; rapid process; perovskite phase; ferroelectric material; film product; exhibit ferroelectric; ferroelectric materials; /427/501/

Citation Formats

Boyle, Timothy J. Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders. United States: N. p., 1999. Web.
Boyle, Timothy J. Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders. United States.
Boyle, Timothy J. Fri . "Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders". United States. https://www.osti.gov/servlets/purl/872096.
@article{osti_872096,
title = {Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders},
author = {Boyle, Timothy J},
abstractNote = {A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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Works referenced in this record:

Solution-sol-gel processing of lead magnesium niobate thin films
journal, August 1990


La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories
journal, December 1995


Structural Investigations of Prehydrolyzed Precursors Used in the Sol-Gel Processing of Lead Titanate
journal, August 1990


Films of 60/40 PZT by the mod process for memory applications
journal, July 1991